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Aluminum Antimonide Sputtering Target

ST0940 Aluminum Antimonide Sputtering Target, AlSb

Chemical FormulaAlSb
Catalog No.ST0940
CAS Number25152-52-7
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Antimonide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Aluminum Antimonide Sputtering Target Description

Aluminum Antimonide Sputtering Targets are specialized materials used in the sputtering process for the deposition of thin films. Aluminum antimonide is a semiconductor material frequently employed in the development of compound semiconductors. These sputtering targets are utilized to create thin films for various applications, including semiconductor devices, infrared detectors, and other electronic or optoelectronic components.

The Aluminum Antimonide Sputtering Targets provided by TFM are of exceptionally high purity, ensuring stable physical and chemical properties. This high purity guarantees excellent electrical and optical characteristics, making them suitable for both scientific research and production environments with stringent material requirements.

Related Product: Aluminum Nitride Sputtering Target, Aluminum Telluride Sputtering Target

Aluminum Antimonide Sputtering Target Specifications

Compound FormulaAlSb
Molecular Weight148.73
AppearanceBlack Target
Melting Point1,060℃
Density4.26
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Aluminum Antimonide Sputtering Target Handling Notes

Indium bonding is recommended for Aluminum Antimonide Sputtering Targets due to their inherent characteristics, such as brittleness and low thermal conductivity, which can make them challenging to handle during sputtering processes. The material’s low thermal conductivity and susceptibility to thermal shock necessitate careful bonding techniques to ensure stable and effective sputtering operations.

Aluminum Antimonide Sputtering Target Application

  • Semiconductor Devices: Aluminum antimonide (AlSb) thin films, deposited using sputtering targets, are used in the fabrication of various semiconductor devices, making them suitable for electronic and optoelectronic components.
  • Infrared Detectors: AlSb’s performance in the infrared spectrum makes it ideal for use in infrared detectors, sensors, and imaging devices.
  • Thermoelectric Devices: AlSb thin films are utilized in thermoelectric devices, where they contribute to energy harvesting and cooling applications.
  • Optoelectronic Devices: The semiconductor properties of AlSb make it appropriate for optoelectronic devices, including light-emitting diodes (LEDs) and photodetectors.

Aluminum Antimonide Sputtering Target Packaging

Our Aluminum Antimonide Sputtering Target is meticulously handled during storage and transportation to maintain the quality and integrity of our products.

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TFM offers Aluminum Antimonide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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