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ST0933 Aluminum Selenide Sputtering Target, Al2Se3

Chemical FormulaAl2Se3
Catalog No.ST0933
CAS Number1302-82-5
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Aluminum Selenide Sputtering Target Description

Aluminum Selenide Sputtering Targets, known for their high purity and fine particle size, are ideal for use in semiconductor and optical instruments, offering a wide range of application possibilities. These targets allow for the deposition of ultra-high purity thin films on solid substrates through sputtering techniques. This process involves ion bombardment, which transforms the target material into a gaseous or plasma phase, enabling precise control over the film deposition.

Aluminum selenide itself is a semiconductor material with unique electrical properties, sitting between a conductor and an insulator. It exhibits high electrical resistivity but demonstrates a photoconductive effect, where its conductivity increases when exposed to light. This makes Aluminum Selenide Sputtering Targets particularly valuable in semiconductor and optical applications, where their ability to respond to light is crucial.

Related Product: Aluminum Nitride Sputtering Target, Aluminum Telluride Sputtering Target

Aluminum Selenide Sputtering Target Specifications

Compound FormulaAl2Se3
Molecular Weight290.84
AppearanceGray Target
Melting Point–
Density3.43 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Aluminum Selenide Sputtering Target Handling Notes

Indium bonding is advised for the Aluminum Selenide Sputtering Target due to the material’s specific characteristics that can pose challenges during sputtering. Aluminum selenide is brittle and has low thermal conductivity, making it vulnerable to thermal shock. Indium bonding helps mitigate these issues, enhancing the target’s stability and performance throughout the sputtering process.

Aluminum Selenide Sputtering Target Application

Aluminum Selenide Sputtering Targets offer significant advantages in specialized fields such as photovoltaics, optoelectronics, and magnetic materials. With electrical properties that bridge the gap between conductors and insulators, and a photoconductive response that enhances conductivity under light exposure, they are an excellent material choice for these applications. Furthermore, these targets are utilized in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes, particularly in the development of advanced display technologies, where their unique characteristics contribute to improved performance and efficiency.

Aluminum Selenide Sputtering Target Packaging

Our Aluminum Selenide Sputtering Target is meticulously handled during storage and transportation to ensure that the product maintains its original quality and integrity. We take every precaution to preserve its condition, ensuring that it arrives ready for optimal performance in your applications.

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TFM offers Aluminum Selenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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