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ST0221 Boron Carbide Sputtering Target, B4C

Chemical Formula:Ā B4C
Catalog Number:Ā ST0221
CAS Number:Ā 12069-32-8
Purity:Ā 99.5%
Shape:Ā Discs, Plates, Column Targets, Step Targets, Custom-made

Boron CarbideĀ  sputtering targetĀ  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Boron Carbide Sputtering TargetĀ Description

Boron Carbide sputtering target from TFM is a carbide ceramic sputtering material with the chemical formula B4C.

Boron

Boron is a chemical element with the symbol “B,” originating from the Arabic word ā€˜buraq,ā€™ which referred to borax. It was first identified in 1808 by L. Gay-Lussac and L.J. ThĆ©nard, with its isolation later achieved and announced by H. Davy. Boron has an atomic number of 5, positioned in Period 2 and Group 13 of the periodic table, within the p-block. The relative atomic mass of boron is 10.811(7) Dalton, with the number in brackets indicating the uncertainty.

Related Product:Ā Boron Sputtering Target

CarbonCarbon is a chemical element with the symbol “C,” originating from the Latin word ā€˜carbo,ā€™ meaning charcoal. It has been in use since around 3750 BC, discovered by the Egyptians and Sumerians. Carbon has an atomic number of 6 and is located in Period 2 and Group 14 of the periodic table, within the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, with the number in brackets indicating the measurement uncertainty.

Boron Carbide Sputtering TargetĀ Handling Notes

Specialized bonding services for Boron Carbide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Boron Carbide Sputtering Target Application

The boron carbide sputtering target is utilized in a variety of applications, including thin film deposition, decoration, semiconductor manufacturing, displays, LEDs, and photovoltaic devices. It is also used for functional coatings in the optical information storage industry, as well as in glass coating for car windows and architectural glass. Additionally, boron carbide is employed in optical communication technologies.

Boron Carbide Sputtering TargetĀ Packaging

Our boron carbide sputtering target is meticulously tagged and labeled on the exterior to ensure easy identification and maintain stringent quality control. We take extensive precautions to prevent any damage during storage or transportation, ensuring the product arrives in pristine condition.

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TFM offers Boron Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

Itā€™s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Alā‚‚Oā‚ƒ, SiOā‚‚, TiOā‚‚), alloys, or compositesā€”chosen based on the filmā€™s desired properties.

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They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

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In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

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Key factors include the targetā€™s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

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Operators monitor target erosion (often by measuring the depth of the eroded ā€œrace trackā€) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

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Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

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DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the targetā€™s surface.

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In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also ā€œpoisonā€ the target surface if not carefully controlled.

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Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

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Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

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