Cobalt Silicide Sputtering Target Description
The Cobalt Silicide Sputtering Target is a crucial material in the sputtering process for creating thin films used in semiconductor and microelectronics manufacturing. This process involves bombarding the target material with high-energy ions, causing atoms or molecules to be ejected and deposited onto a substrate, forming a thin film. Cobalt Silicide, available in various stoichiometries, is highly valued in semiconductor fabrication for its excellent properties.
Thin films are applied to substrates that have been meticulously cleaned and are similar in composition to the target material. By carefully adjusting the sputtering power and rate, along with subsequent processing, films are produced that exhibit excellent electrical conductivity, thermal stability, and minimal stress.
TFM offers Cobalt Silicide Sputtering Targets that ensure high purity, uniform composition, and top-notch film quality. Cobalt Silicide (CoSi2) is particularly noted for its low resistivity and thermal stability, making it a popular choice for contacts in large-scale integrated circuits.
Related Product: Cobalt Oxide Sputtering Targets, Cobalt Sputtering Target
Cobalt Silicide Sputtering Target Specifications
Compound Formula | CoSi2 |
Molecular Weight | 115.10 |
Appearance | Black Target |
Melting Point | – |
Density | 4.9 g/cm3 |
Available Sizes | Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″ Thick: 0.125″, 0.250″ |
Cobalt Silicide Sputtering Target Handling Notes
Indium bonding is advised for Cobalt Silicide Sputtering Targets because certain characteristics, such as brittleness and low thermal conductivity, make them challenging to sputter effectively. This material is prone to thermal shock due to its low thermal conductivity, so indium bonding helps mitigate these issues, ensuring better performance and stability during the sputtering process.
Cobalt Silicide Sputtering Target Application
Cobalt Silicide Sputtering Targets are versatile materials used across various applications, including Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and optical processes. Due to its low resistivity and excellent thermal stability, cobalt silicide has become a widely preferred material for contacts in large-scale integrated circuits. Additionally, these sputtering targets hold significant research value and potential applications in the electrical field, making them a valuable choice for both industrial and research purposes.
Cobalt Silicide Sputtering Target Packaging
Our Cobalt Silicide Sputtering Target is meticulously handled during storage and transportation to ensure that the products maintain their original quality and integrity. This careful management guarantees that you receive the sputtering targets in perfect condition, ready for optimal performance in your applications.
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