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ST0962 Gallium Phosphide Sputtering Target, GaP

Chemical FormulaGaP
Catalog No.ST0962
CAS Number12063-98-8
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Gallium Phosphide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Gallium Phosphide Sputtering Target Description

Gallium Phosphide Sputtering Target is a specialized material designed for the sputtering process used in thin film deposition. During sputtering, high-energy ions bombard the target, causing atoms to be ejected from its surface. These atoms then deposit onto a substrate, forming a thin film with desired properties.

Gallium Phosphide is characterized by its cubic crystal structure, where gallium and phosphorus atoms are arranged in a regular lattice. It has notable optical properties, including a band gap of approximately 2.26 electron volts (eV), making it well-suited for applications in optoelectronics and the manufacturing of optical devices. As a semiconductor, Gallium Phosphide features tunable electrical conductivity, which is advantageous for both electronics and optoelectronic applications.

Although Gallium Phosphide itself is not magnetic, introducing magnetic impurities through specific doping can enable studies in magnetic materials. At room temperature, it behaves as a semiconductor, with its conductivity lying between that of a conductor and an insulator, depending on impurity levels and types. Additionally, Gallium Phosphide demonstrates good thermal stability, making it suitable for high-temperature applications across various environments.

Related Product: Gallium (III) Selenide Sputtering Target, CIGS Copper Indium Gallium Phosphide Sputtering Target

Gallium Phosphide Sputtering Target Specifications

Compound FormulaGaP
Molecular Weight100.70
AppearanceYellow Target
Melting Point–
Density4.14 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium Phosphide Sputtering Target Handling Notes

Indium bonding is recommended for Gallium Phosphide Sputtering Targets due to the material’s characteristics that can complicate the sputtering process. Gallium Phosphide, with its low thermal conductivity and susceptibility to thermal shock, can present challenges during sputtering. Indium bonding helps mitigate these issues by enhancing thermal management and improving the overall stability of the sputtering process.

Gallium Phosphide Sputtering Target Application

  1. Optoelectronics: Gallium Phosphide is integral in fabricating optoelectronic devices like LEDs and lasers. Its superior optical characteristics ensure reliability and performance in these applications.
  2. Semiconductor Devices: As a semiconductor material, Gallium Phosphide is used in creating various semiconductor devices, including field-effect transistors (FETs) and photodetectors. Its electrical properties are crucial for the functionality of these devices.
  3. Optical Coatings: Gallium Phosphide’s excellent optical attributes make it suitable for preparing high-quality optical coatings. This includes applications in reflector sheets and optical sensors used in lasers and other optical equipment.
  4. Magnetic Materials Research: When doped with specific elements, Gallium Phosphide is used in research to explore magnetic properties. This can be relevant for developing magnetic storage solutions and sensors.
  5. Electronic Components: The semiconducting nature of Gallium Phosphide supports the production of various electronic components, including integrated circuits and other essential electronic devices.

Gallium Phosphide Sputtering Target Packaging

Our Gallium Phosphide Sputtering Target is meticulously managed throughout storage and transportation to maintain its quality and integrity. We ensure that it remains in optimal condition, preserving its performance characteristics for your needs.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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