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ST0948 Lead Arsenide Sputtering Target, PbAs

Chemical FormulaPbAs
Catalog No.
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Lead Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lead Arsenide Sputtering Target Description

Lead Arsenide Sputtering Targets are utilized in sputter deposition processes to create thin films for diverse applications in electronics, optoelectronics, and semiconductor technologies. These targets are composed of semiconducting materials, offering conductivity between that of a conductor and an insulator, which is ideal for various semiconductor applications.

The direct energy gap of Lead Arsenide allows for efficient electron and hole transitions with minimal energy, making it suitable for optoelectronic devices where efficient energy transitions are essential. Additionally, Lead Arsenide Sputtering Targets generally exhibit good thermal stability, enabling their use in high-temperature environments within specified limits.

Related Product: Lead Oxide Sputtering Target, Lead Zirconate Sputtering Target

Lead Arsenide Sputtering Target Specifications

Compound FormulaPbAs
Molecular Weight282.12
AppearanceGrey Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Lead Arsenide Sputtering Target Handling Notes

Indium bonding is recommended for Lead Arsenide Sputtering Targets because of their inherent characteristics that may not be well-suited for sputtering. Lead Arsenide exhibits properties such as brittleness and low thermal conductivity, which can lead to issues during the sputtering process. To address these challenges, indium bonding is used to enhance the stability and performance of the sputtering targets.

Lead Arsenide’s low thermal conductivity and susceptibility to thermal shock further necessitate careful handling and the use of appropriate bonding materials to maintain the integrity of the sputtering target during processing.

Lead Arsenide Sputtering Target Application

Semiconductor Device Preparation: Lead Arsenide Sputtering Targets are utilized in sputtering deposition processes for the fabrication of semiconductor devices, including thin-film transistors (TFTs) and various integrated circuit components. The unique semiconducting properties of Lead Arsenide (PbAs) make it suitable for these applications.

Optoelectronic Devices: Lead Arsenide, as a semiconductor material, is also employed in the production of optoelectronic devices. Sputtering targets are used to create photodetectors, lasers, and other optoelectronic components. Additionally, Lead Arsenide Sputtering Targets are used in the preparation of semiconductor nanostructures such as nanowires and nanodots, which are critical in the development of advanced nanoelectronic devices.

Topological Insulator Research: Lead Arsenide (PbAs) may exhibit topological insulator properties under certain conditions. Consequently, Lead Arsenide Sputtering Targets are valuable for research in topological physics, helping to explore and understand topological insulators and their potential applications.

Lead Arsenide Sputtering Target Packaging

Our Lead Arsenide Sputtering Target is meticulously handled during storage and transportation to ensure that the quality of our products remains intact and is preserved in their original condition.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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