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Lithium Oxide Sputtering Targets

ST0873 Lithium Aluminum Germanium Phosphate Sputtering Target

Chemical Formula: LAGP
Catalog Number: ST0873
Purity: 99.9% ~99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Lithium Aluminum Germanium Phosphate sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lithium Aluminum Germanium Phosphate Sputtering Target Description

Lithium

Lithium Aluminum Germanium Phosphate Sputtering Target is a white sputtering material composed of lithium (Li), aluminum (Al), germanium (Ge), and phosphorus (P).

Lithium is a chemical element derived from the Greek word ‘lithos,’ meaning stone. First identified in 1817 by A. Arfwedson, its isolation was later achieved and announced by W. T. Brande. The chemical symbol for lithium is “Li,” and it has an atomic number of 3, located in Period 2, Group 1 of the periodic table, and belongs to the s-block. Its relative atomic mass is 6.941(2) Dalton, with the number in brackets indicating the uncertainty.

Related: Lithium Sputtering Target

Aluminum

Aluminum, or Aluminium, is a silvery-white, soft, non-magnetic, and ductile metal in the boron group. It constitutes about 8% of the Earth’s crust by mass, making it the third most abundant element after oxygen and silicon, and the most abundant metal in the crust. Despite its abundance, aluminum is less common in the Earth’s mantle. The primary ore of aluminum is bauxite. Due to its high reactivity, native aluminum is rare and found only in extreme reducing environments; it is typically found combined in over 270 different minerals.

Related: Aluminum Sputtering Target

GermaniumGermanium is a chemical element named after Germany, with its Latin name being *Germania*. It was first identified in 1886 by A. Winkler. The canonical chemical symbol for germanium is “Ge,” and its atomic number is 32. Located in Period 4 and Group 14 of the periodic table, germanium belongs to the p-block. Its relative atomic mass is 72.64(1) Dalton, with the number in brackets indicating the uncertainty.

Related: Germanium Sputtering Target

PhosphorusPhosphorus is a chemical element named after the Greek word “phosphoros,” meaning bringer of light. It was first mentioned in 1669 by H. Brand, who also accomplished its isolation. The canonical chemical symbol for phosphorus is “P.” Its atomic number is 15, and it is located in Period 3 and Group 15 of the periodic table, belonging to the p-block. The relative atomic mass of phosphorus is 30.973762(2) Dalton, with the number in brackets indicating the uncertainty.

Lithium Aluminum Germanium Phosphate Sputtering Target Specification

Material TypeLithium Aluminum Germanium Phosphate
SymbolLAGP
Color/AppearanceWhite Solid
Density3.42 g/cm3
Available SizesDia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Lithium Aluminum Germanium Phosphate Sputtering Target Packing

Our Lithium Aluminum Germanium Phosphate sputtering targets are clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage or transportation.

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TFM offers Lithium Aluminum Germanium Phosphate Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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