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Lithium Oxide Sputtering Targets

ST0955 Barium Zirconium Yttrium Oxide Sputtering Target, BZY

Chemical FormulaBaZrxYyO3
Catalog No.ST0955
CAS Number163294-84-6
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Barium Zirconium Yttrium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Barium Zirconium Yttrium Oxide Sputtering Target Description

Barium Zirconium Yttrium Oxide Sputtering Target is notable for its distinctive material properties, particularly its unique crystal structure. This structure provides exceptional qualities essential for semiconductor applications and ensures precision in thin film deposition. Designed for excellence in electronic device manufacturing, this target delivers reliable performance in both research and industrial settings. Its engineered properties make it a superior choice for achieving high-quality thin film coatings and advancing technology.

Related Product: Barium Titanate Sputtering Target, Barium Zirconate Sputtering Target

Barium Zirconium Yttrium Oxide Sputtering Target Specifications

Compound FormulaBaZrxYyO3
Molecular Weight–
AppearanceWhite Target
Melting Point–
Density–
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Barium Zirconium Yttrium Oxide Sputtering Target Handling Notes

Indium bonding is recommended for Barium Zirconium Yttrium Oxide Sputtering Targets due to the material’s brittleness and low thermal conductivity. These characteristics make it less suitable for direct sputtering applications. The low thermal conductivity and susceptibility to thermal shock further necessitate the use of indium bonding to ensure stable performance and integrity during the sputtering process.

Barium Zirconium Yttrium Oxide Sputtering Target Application

  • Electronic Device Preparation: Barium Zirconium Yttrium Oxide Sputtering Targets enhance the performance of electronic devices through precise thin film deposition, leveraging their distinctive crystal structure and electrical characteristics.
  • Optoelectronics: The unique crystal structure of Barium Zirconium Yttrium Oxide is crucial in optoelectronics, facilitating the production of photodiodes, lasers, and other optical components with advanced properties.
  • Catalytic Applications: The multi-element composition of Barium Zirconium Yttrium Oxide may induce catalytic activity, making it useful in chemical synthesis and energy conversion processes.
  • Magnetic Materials Research: The potential magnetic properties of Barium Zirconium Yttrium Oxide contribute to research in magnetic materials, with applications in magnetic memory devices and related studies.
  • High-Temperature Stable Materials: Its inherent high thermal stability, due to its crystal structure and elemental composition, makes Barium Zirconium Yttrium Oxide suitable for crafting materials in high-temperature environments.

Barium Zirconium Yttrium Oxide Sputtering Target Packaging

Our Barium Zirconium Yttrium Oxide Sputtering Target is carefully handled during storage and transportation to ensure that the product maintains its quality and integrity.

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TFM offers Barium Zirconium Yttrium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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