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Ferrum Doped Strontium Titanate Substrate

Ferrum Doped Strontium Titanate Substrate (Fe: SrTiO3)

Ferrum Doped Strontium Titanate Substrate (Fe: SrTiO3)

Ferrum Doped Strontium Titanate (Fe: SrTiO3) single crystal shares a structural similarity with standard SrTiO3, offering excellent lattice matching with perovskite materials. This substrate is widely used for epitaxial growth of various oxide films, with doping concentrations of 0.05% and 0.04% available for advanced research applications.

Physical Properties of Ferrum Doped Strontium Titanate Substrate

PropertyDetails
MaterialFe: SrTiO3
Crystal StructureCubic
Lattice (A)a = 3.905
Growth MethodVernuil Method
Hardness6.0 – 6.5 (Mohs)
Melting Point2080°C
Doped Concentration0.05%, 0.04% Fe
Density (g/cm³)5.122
Thermal Expansion9.4 (x 10⁻⁶/°C)
Dielectric Constantsε = 5.2
Dielectric Loss~ 5 × 10⁻⁴ (300K), ~ 3 × 10⁻⁴ (77K)
Chemical StabilityInsoluble in water

Specifications of Ferrum Doped Strontium Titanate Substrate

ParameterDetails
Sizes (mm)10×3, 10×5, 10×10, 15×15, 20×15, 20×20
Thickness0.5 mm, 1.0 mm
Polishing TypeSSP or DSP
Orientation<100>, <110>, <111>
Redirection Precision±0.5°
Edge Redirection2° (special: 1°)
Crystalline AngleCustom sizes and orientations available
Surface Roughness (Ra)≤5Å (5µm × 5µm)

Packaging of Ferrum Doped Strontium Titanate Substrate

Fe: SrTiO3 substrates are meticulously packaged in a controlled cleanroom environment to ensure product integrity and quality. Each substrate is securely sealed in a class 100 clean bag or wafer container within a class 1000 clean room, ensuring protection from contamination during storage and transport.

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FAQ

A thin film substrate is the base material upon which thin layers of materials are deposited to create electronic, optical, or mechanical devices. The substrate provides structural support and can influence the properties of the thin film.

The choice of substrate affects the film’s structural integrity, electrical properties, and overall performance. Factors like thermal expansion coefficient, surface smoothness, and chemical compatibility are crucial considerations.

Materials such as lanthanum aluminate (LaAlO₃), magnesium oxide (MgO), and strontium titanate (SrTiO₃) are commonly used due to their lattice compatibility and thermal stability, which are essential for optimal superconducting properties.

Metal substrates offer high electrical and thermal conductivity, making them suitable for applications requiring efficient heat dissipation and electrical connectivity. However, their surface properties and potential for oxidation must be managed during deposition.

These substrates are materials that can support the growth of thin films exhibiting magnetic or ferroelectric properties, essential for applications in memory devices, sensors, and actuators.

Semiconductor substrates, such as silicon wafers, serve as the foundation for integrated circuits and various electronic components, providing the necessary electrical characteristics and structural support for device fabrication.

Gallium Nitride (GaN) substrates are pivotal for high-performance optoelectronic and power devices due to their excellent thermal conductivity, high breakdown voltage, and efficiency. They are widely used in LEDs, power transistors, and RF components.

Halide crystal substrates, composed of halide compounds, are utilized in specialized optical applications, including infrared spectroscopy and laser systems, due to their unique optical properties.
Ceramic substrates provide high thermal stability, mechanical strength, and electrical insulation, making them ideal for high-frequency and high-power applications.
Proper surface preparation, including cleaning and polishing, ensures the removal of contaminants and surface irregularities, leading to improved film adhesion, uniformity, and performance.
Yes, thin films can be deposited on flexible substrates like polymers, enabling the development of flexible electronics and wearable devices. However, challenges include managing mechanical stress and ensuring film adhesion.
Challenges include ensuring lattice matching to minimize defects, managing thermal expansion differences to prevent stress and delamination, and achieving desired electrical and optical properties for specific applications.
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