Si + SiO₂ + Ti + Pt Wafer
Introduction
The Si + SiO₂ + Ti + Pt Wafer is a multilayer metallized silicon substrate engineered for advanced microfabrication, sensor integration, and high-temperature electronic applications. By combining a thermally grown silicon dioxide insulating layer with titanium and platinum metal stacks, this wafer structure provides excellent electrical isolation, strong metal adhesion, and superior chemical stability.
Such composite wafers are widely used in microelectromechanical systems (MEMS), biosensors, microheaters, and thin film research, where reliable metal contacts on an insulated silicon platform are essential for device performance and long-term stability.
Detailed Description
A Si + SiO₂ + Ti + Pt Wafer typically consists of four functional layers:
Silicon (Si) Substrate – Usually single-crystal, prime-grade silicon (orientation such as <100> or <111>), serving as the mechanical foundation and, when required, an active semiconductor layer.
Silicon Dioxide (SiO₂) Layer – Thermally grown or deposited oxide providing high-quality electrical insulation and surface passivation.
Titanium (Ti) Adhesion Layer – A thin interfacial layer that promotes strong bonding between SiO₂ and platinum.
Platinum (Pt) Top Layer – A noble metal layer offering excellent conductivity, corrosion resistance, and thermal stability.
Structural Significance
SiO₂ Insulation: Prevents electrical leakage between the silicon substrate and the metal electrode, critical for sensor accuracy and device reliability.
Titanium Adhesion: Platinum alone adheres poorly to oxide surfaces. A controlled Ti layer (typically 5–30 nm) forms a stable interface, significantly improving film durability during thermal cycling.
Platinum Stability: Platinum exhibits outstanding oxidation resistance and chemical inertness, maintaining conductivity even in harsh environments or elevated temperatures.
Layer thicknesses can be precisely tailored according to customer design requirements. Platinum thickness may range from tens of nanometers (for microelectrodes) to several hundred nanometers (for power or heating elements). Surface roughness, wafer diameter (2″–8″ or custom), and oxide thickness can also be customized to meet cleanroom processing standards.
Applications
The Si + SiO₂ + Ti + Pt Wafer is widely applied in:
MEMS devices – Microheaters, pressure sensors, and microactuators
Biosensors & Electrochemical Sensors – Stable platinum electrodes for biochemical detection
Microelectrodes & Interconnects – Reliable contact layers in semiconductor R&D
High-Temperature Sensors – Gas sensing and thermal monitoring devices
Thin Film Research Platforms – Deposition studies and catalytic surface investigations
Energy Devices – Micro fuel cells and solid-state electrochemical components
The Pt surface is particularly valuable in catalytic and electrochemical environments where oxidation resistance and conductivity are required simultaneously.
Technical Parameters
| Parameter | Typical Value / Range | Importance |
|---|---|---|
| Substrate Material | Single Crystal Silicon | Mechanical support & semiconductor base |
| Wafer Diameter | 2″ – 8″ (custom available) | Compatibility with processing tools |
| SiO₂ Thickness | 100 nm – 1000 nm | Electrical insulation & surface quality |
| Ti Layer Thickness | 5 – 30 nm | Ensures strong adhesion to oxide |
| Pt Layer Thickness | 50 – 500 nm (custom) | Conductivity & corrosion resistance |
| Surface Finish | Polished / Prime Grade | Critical for photolithography accuracy |
Comparison with Related Materials
| Material System | Key Advantage | Typical Application |
|---|---|---|
| Si + SiO₂ + Ti + Pt | Excellent chemical stability & adhesion | Sensors & MEMS devices |
| Si + SiO₂ + Cr + Au | High conductivity, lower cost | Microelectrodes |
| Si + SiO₂ + Ti + Au | Good conductivity, moderate stability | General microfabrication |
| Bare Si Wafer | Cost-effective substrate | Semiconductor devices |
Platinum-based stacks are preferred when corrosion resistance, high-temperature performance, or electrochemical stability are primary concerns.
FAQ
| Question | Answer |
|---|---|
| Can the layer thickness be customized? | Yes, SiO₂, Ti, and Pt thicknesses can be precisely controlled according to your design. |
| What wafer sizes are available? | Standard 2″, 3″, 4″, 6″, and 8″ wafers are available; custom sizes can be produced upon request. |
| Is the platinum layer suitable for high-temperature use? | Yes, platinum maintains structural and electrical stability at elevated temperatures. |
| Can patterned metallization be supplied? | Yes, photolithography-defined patterns can be provided based on customer drawings. |
| How is the wafer packaged? | Cleanroom vacuum packaging with protective wafer carriers to prevent contamination and mechanical damage. |
Packaging
Our Si + SiO₂ + Ti + Pt Wafers are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the wafers arrive in perfect condition.
Conclusion
The Si + SiO₂ + Ti + Pt Wafer offers a robust, chemically stable, and electrically reliable platform for advanced microfabrication, sensing, and research applications. With customizable layer thickness, wafer size, and surface specifications, it provides flexibility for both industrial production and laboratory development.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.
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