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Tungsten Sputtering Target, W

Material: Tungsten Sputtering Target
Formula: W
Catalog No.: TFM-SPT-0644

Elemental W source for sputtered thin films. Define purity and microstructure evidence, cathode geometry and cooling, and the film tests required for the application. Grade, dimensions, assembly, documentation and availability are confirmed in the quotation.

COA_W_TRGPdf

What is a tungsten sputtering target?

A tungsten (W) sputtering target is an elemental refractory-metal source used to deposit W-containing thin films. Selection should connect the required purity and microstructure evidence to cathode cooling, target geometry, power conditions, and the film tests specified by the buyer.

Using evaporation instead? See the tungsten evaporation material page for the corresponding product form.

Explore related materials in the Sputtering Targets catalog.


Tungsten

tungsten_sputtering_target_microstructure
The Microstructure of Tungsten Sputtering Target

Material and Deposition Characteristics

Because the target is electrically conductive, DC magnetron sputtering is often applicable, although pulsed-DC or other power modes may also be used depending on the deposition system and film target. For high-specification films, target grain structure, residual stress, and surface preparation can influence erosion uniformity and the morphology of the deposited layer. When higher power loading or system-specific mounting is involved, a bonded target assembly may also be considered.

Element reference versus target specification

Elemental tungsten (W) has a melting point of approximately 3422 °C and bulk density of approximately 19.3 g/cm³ (PubChem element reference). These elemental constants are not a promised target density, available size, bond type, operating mode, or film result. Confirm order-specific target and inspection requirements in the quotation.

How to specify tungsten sputtering target for an RFQ

The following fields define the order and the tests needed to qualify this target; final availability and acceptance criteria belong in the approved quotation or drawing.

DecisionInformation to provide or verify
Material identitySpecify the W grade, impurity limits, and any density or microstructure acceptance method needed for the intended film.
Target and cathode fitProvide the target drawing, thickness, mounting or backing interface, cathode cooling arrangement, and expected operating power range.
Film acceptanceIdentify film thickness, composition, stress, or electrical checks required under the actual sputtering recipe; confirm the inspection documents in the quotation.

Send the specification and drawing for review. The selected source or target and the deposited film require separate acceptance evidence.

Typical Thin-Film Applications

  • High-temperature and refractory thin films for semiconductor and advanced device structures
  • Diffusion barriers, electrodes, interconnect-related layers, and protective coatings
  • Research and production where thermal stability and low vapor pressure are important

Target Configuration and Ordering Considerations

For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.

Frequently Asked Questions

Can Tungsten sputtering targets be used with DC magnetron sputtering?

Yes. Conductive metallic targets are commonly processed with DC magnetron sputtering, although pulsed-DC or other modes may also be used depending on the equipment and film objective.

What purity grade should I choose for a Tungsten target?

The required purity should be selected from the contamination limits and performance needs of the deposited film. Higher purity can reduce unwanted impurities, but the optimum grade should match the application rather than default to the highest available level.

Why do density and microstructure matter for Tungsten targets?

Target density, grain structure, and residual stress can influence erosion behavior, process stability, and the morphology of the deposited film. These factors become more important as film-quality requirements become tighter.

Can a Tungsten target be bonded to a copper backing plate?

Backing and bonding depend on cathode geometry, heat loading and the requested assembly; do not assume a standard copper-backed target. Provide the drawing and operating conditions for feasibility and quotation review.

What are common applications of sputtered Tungsten films?

Typical uses include conductive layers, metallization, reflective or protective coatings, and composition-specific PVD research. The exact application depends on the properties of the element and the final film stack.

What information should I send TFM for a custom Tungsten target?

Please provide target dimensions, thickness, purity, quantity, target style, backing-plate requirement, cathode model if known, and any tolerance, surface-finish, inspection, or documentation requirements.

Typical specification reference: Download the Tungsten Sputtering Target Typical Specification Sheet (PDF). Illustrative planning values for preliminary RFQ discussion; not a batch CoA or guaranteed acceptance limit. Order-specific requirements and actual batch documentation govern.

Order Now

Ø1" × 3.18 mm, Tungsten (W), 3N5, Ø1" × 6.35 mm, Tungsten (W), 3N5, Ø2" × 3.18 mm, Tungsten (W), 3N5, Ø2" × 6.35 mm, Tungsten (W), 3N5, Ø3" × 3.18 mm, Tungsten (W), 3N5, Ø3" × 6.35 mm, Tungsten (W), 3N5, Ø4" × 3.18 mm, Tungsten (W), 3N5, Ø4" × 6.35 mm, Tungsten (W), 3N5

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

Manufacturing routes depend on the material and target specification. Metal targets may be cast and machined, while some ceramic targets are consolidated by sintering. Ask for the product-specific route and inspection criteria when these affect qualification.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Bonding may be selected for brittle targets, thinner precious-metal targets, or a cathode that needs a specific backing and cooling arrangement. It is not a universal requirement. Provide target and backing dimensions, the cathode model, and operating conditions for assembly review.

 

DC is commonly used with conductive targets. RF is often used for poorly conducting or insulating targets to mitigate surface charging; other power modes may be suitable depending on the target, cathode, and process. Confirm the mode against the equipment and material.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Customer-supplied powder acceptance is not assumed. Provide material identity, lot traceability, composition and impurity analysis, quantity, and handling constraints in the RFQ. TFM must confirm feasibility and acceptance criteria before any material is sent.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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