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ST0088 Copper Indium Sputtering Target, Cu/In

Chemical Formula: Cu/In
Catalog Number: ST0088
CAS Number: 7440-50-8 | 7440
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Copper Indium sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

COA_CuInPdf

Introduction

Copper Indium sputtering targets are widely used in advanced thin-film deposition processes, particularly in applications where precise control of electrical, optical, and compositional properties is required. As a key precursor material for copper–indium–based functional layers, Cu/In targets play an important role in semiconductor research, optoelectronic devices, and energy-related thin films, offering excellent compatibility with modern PVD sputtering systems.

Detailed Description

The Copper Indium Sputtering Target (Cu/In) is typically manufactured as a composite or alloy target, depending on the required stoichiometry and deposition process. By carefully controlling the copper-to-indium ratio, the target enables consistent transfer of material composition from target to substrate, which is critical for achieving uniform film properties.

Copper contributes high electrical conductivity and structural stability, while indium provides excellent ductility and favorable electronic characteristics. The combination allows Cu/In targets to support smooth sputtering behavior, reduced particle generation, and stable plasma conditions. Targets can be produced with high density through advanced powder metallurgy or vacuum hot-pressing techniques, improving sputtering efficiency and extending target lifetime.

Available in a wide range of diameters and thicknesses, Copper Indium sputtering targets can be supplied as unbonded discs or bonded to copper or titanium backing plates. Proper bonding enhances heat dissipation during sputtering, minimizes thermal stress, and ensures reliable performance in both DC and RF sputtering systems.

Applications

Copper Indium Sputtering Targets are commonly used in the following fields:

  • Thin film deposition for semiconductor and microelectronic devices

  • Photovoltaic research, including precursor layers for CIGS-based solar cells

  • Transparent and conductive thin films for optoelectronics

  • Functional coatings in sensors and electronic components

  • R&D applications requiring precise composition control

Technical Parameters

ParameterTypical Value / RangeImportance
CompositionCu/In (custom atomic or weight ratio)Determines film stoichiometry
Purity99.9% – 99.99%Reduces impurities and defects in films
Diameter25 – 300 mm (custom)Compatible with various sputtering systems
Thickness3 – 6 mm (custom available)Influences sputtering rate and lifetime
Density≥99% of theoreticalEnsures stable and uniform sputtering
BondingCopper or Titanium backingImproves heat transfer and stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Copper Indium Sputtering TargetPrecise Cu/In ratio controlSemiconductor & photovoltaic films
Copper Sputtering TargetHigh conductivityInterconnect and conductive layers
Indium Sputtering TargetExcellent ductilityTransparent conductive coatings

FAQ

QuestionAnswer
Can the Cu/In ratio be customized?Yes, the composition can be tailored to specific atomic or weight ratios.
Is bonding to a backing plate required?Bonding is optional but recommended for better thermal management.
Which sputtering methods are suitable?Compatible with DC and RF sputtering systems.
How is the target packaged?Vacuum-sealed with protective materials in export-grade cartons or crates.

Packaging

Our Copper Indium Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and strict quality control. Each target is carefully protected against mechanical damage and contamination during storage and transportation, ensuring it arrives in optimal condition for immediate use.

Conclusion

Copper Indium Sputtering Targets provide a reliable and flexible solution for high-performance thin-film deposition, combining the advantages of copper and indium in a single, customizable material system. With consistent quality, precise composition control, and tailored manufacturing options, these targets are well suited for both industrial production and advanced research applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Order Now

CuIn target 4N Cu15/In85 at% ø50.8×6.35mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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