Product Overview
Titanium Tungsten Sputtering Target (Ti/W) is an alloy sputtering target used to deposit composition-controlled alloy films. Relative to a pure elemental target, the alloying constituents are introduced to tune electrical, magnetic, optical, mechanical, or adhesion-related film properties. For this reason, alloy ratio, homogeneity, purity basis, and the intended film composition should be defined clearly in the procurement specification.
Material and Deposition Characteristics
Many alloy targets are electrically conductive and can be compatible with DC or pulsed-DC magnetron sputtering, subject to the actual alloy composition and equipment capability. The target composition is not always reproduced exactly in the deposited film because preferential sputtering, re-sputtering, substrate heating, and process gas conditions can shift the final ratio. For composition-sensitive work, deposited-film analysis should be part of process qualification.
Technical Data
| Parameter | Typical Value / Range | Importance |
|---|---|---|
| Purity | 99.9% – 99.99% | Reduces contamination and improves thin film quality |
| Composition Ratio | Ti/W customizable (e.g., 10/90, 20/80) | Determines adhesion and barrier performance |
| Density | ≥ 99% theoretical density | Ensures stable sputtering and uniform deposition |
| Diameter | 25 – 300 mm (custom) | Compatible with most sputtering systems |
| Thickness | 3 – 6 mm | Influences target lifetime and sputtering rate |
| Bonding | Copper backing plate optional | Improves thermal conductivity and mechanical stability |
| Material | Key Advantage | Typical Application |
|---|---|---|
| Titanium Tungsten (Ti/W) | Excellent diffusion barrier and adhesion | Semiconductor barrier layers |
| Titanium (Ti) | Strong adhesion to many substrates | Adhesion layers in thin films |
| Tungsten (W) | High melting point and density | High-temperature coatings |
| Tantalum (Ta) | Effective diffusion barrier for copper | Semiconductor interconnect structures |
| Question | Answer |
|---|---|
| Can the Titanium Tungsten Sputtering Target be customized? | Yes, the Ti/W composition ratio, target size, thickness, purity, and bonding options can all be customized. |
| What is the most common Ti/W composition? | One of the most commonly used compositions is Ti10W90, which offers excellent diffusion barrier performance and adhesion. |
| Do Ti/W targets require backing plates? | For high-power sputtering systems, copper backing plates are recommended to improve heat dissipation and prevent thermal stress. |
| Which deposition methods are suitable for Ti/W targets? | Titanium Tungsten targets are typically used in DC magnetron sputtering and RF sputtering systems. |
| Which industries commonly use Ti/W sputtering targets? | Semiconductor manufacturing, MEMS fabrication, electronics production, and advanced materials research. |
Typical Thin-Film Applications
- Titanium Tungsten alloy films where composition control is important to electrical, mechanical, magnetic, or optical performance
- Multilayer stacks, adhesion/barrier layers, conductive films, or functional coatings depending on the alloy system
- Research and production programs that require customized alloy ratios and repeatable sputtering behavior
Target Configuration and Ordering Considerations
For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.
Frequently Asked Questions
Can the composition of a Titanium Tungsten sputtering target be customized?
Yes. For alloy targets, the required ratio should be specified clearly in wt% or at%. TFM can review custom compositions together with purity, dimensions, and manufacturability.
Will an alloy target always produce a film with the same composition?
Not necessarily. Preferential sputtering, substrate heating, process gas, and re-sputtering effects can shift the deposited composition relative to the nominal target chemistry. Film analysis should be used when the composition is critical.
Is a Titanium Tungsten alloy target compatible with DC magnetron sputtering?
Many metallic alloy targets are electrically conductive and can be compatible with DC or pulsed-DC sputtering, but the final choice depends on the actual alloy system and equipment.
Why is alloy homogeneity important in a Titanium Tungsten target?
A uniform alloy distribution helps support stable erosion and reduces local composition variation across the target, which in turn helps improve run-to-run consistency.
Can a Titanium Tungsten target be supplied bonded?
Yes. Where the cathode or thermal load requires it, TFM can supply bonded assemblies. Backing-plate material, target thickness, bonding method, and operating power should be reviewed together.
What should I include in an RFQ for Titanium Tungsten?
Specify the alloy composition, purity basis, dimensions, quantity, backing requirement, cathode model or drawing, and any tolerance, inspection, or documentation requirements.
Reviews
There are no reviews yet.