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Bismuth Oxide Sputtering Target, Bi2O3

Chemical Formula: Bi2O3
Catalog Number: TFM-SPT-0070
CAS Number: 1304-76-3
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Bismuth Oxide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Product Overview

Bismuth Oxide Sputtering Target (Bi2O3) is a ceramic sputtering target used to deposit composition-specific oxide thin films. Compared with metallic targets, oxide targets are typically more sensitive to density, porosity, brittleness, thermal shock, and bonding design. In practice, target microstructure, thickness, cooling conditions, and the chosen sputtering mode can all affect arc stability, particle generation, and deposited-film performance.

Material and Deposition Characteristics

RF magnetron sputtering is commonly considered for insulating or semiconducting oxide targets, while sufficiently conductive formulations may allow alternative power modes in some systems. Target density and microstructural uniformity matter because pores, cracks, and local inhomogeneities can contribute to unstable plasma, particles, or target damage. For brittle ceramics, bonded assemblies and gradual power ramping are often worth evaluating.

Technical Data

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%High purity ensures stable optical and electrical properties
Chemical FormulaBi₂O₃Determines oxide structure and functional behavior
Diameter25 – 300 mm (custom)Compatible with standard sputtering systems
Thickness3 – 6 mmInfluences sputtering efficiency and target lifespan
Density≥ 95% theoretical densityImproves sputtering stability and film uniformity
BondingCopper backing plate / Indium bondedEnhances heat dissipation during sputtering
MaterialKey AdvantageTypical Application
Bismuth Oxide (Bi₂O₃)High refractive index and ionic conductivityOptical coatings and electrochemical devices
Zinc Oxide (ZnO)Transparent conductive oxideDisplays and transparent electronics
Indium Tin Oxide (ITO)Excellent electrical conductivity and transparencyTouch screens and display panels
QuestionAnswer
What sputtering methods are suitable for Bi₂O₃ targets?Bi₂O₃ sputtering targets are typically used in RF magnetron sputtering systems designed for ceramic materials.
Can the target dimensions be customized?Yes. Diameter, thickness, and bonding configurations can be tailored to specific sputtering equipment.
Are bonded sputtering targets available?Yes. Bi₂O₃ targets can be bonded to copper backing plates using indium bonding to improve thermal management.
What purity levels are typically available?Standard purity ranges from 99.9% to 99.99%.
What substrates can Bi₂O₃ thin films be deposited on?Bi₂O₃ films can be deposited on glass, silicon wafers, ceramics, and other electronic substrates.

Typical Thin-Film Applications

  • Dielectric, insulating, optical, magnetic, protective, or functional ceramic thin films
  • Semiconductor, sensor, photonic, and multilayer coating research
  • Applications where oxide composition, density, and process stability affect film performance

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

Is Bismuth Oxide better suited to RF or DC sputtering?

RF magnetron sputtering is commonly considered for insulating or semiconducting oxide targets. If a specific formulation is sufficiently conductive, other modes may also be possible, but the equipment and target properties should be confirmed.

Why is density important for a Bismuth Oxide target?

Density and microstructural uniformity affect erosion stability, thermal behavior, and particle risk. Pores, cracks, or local density variations can contribute to unstable sputtering and target damage.

Should a Bismuth Oxide target be bonded to a backing plate?

Bonding is often useful for brittle oxide targets because it can improve mechanical support and heat transfer. The backing material and bonding method should be chosen according to target size, thickness, and operating conditions.

Will the deposited film always have the same composition as Bi2O3?

Not always. Film composition can be affected by preferential sputtering, reactive gas, substrate temperature, re-sputtering, and chamber conditions. Composition-sensitive films should be verified after deposition.

How should power be ramped on a brittle Bismuth Oxide target?

A conservative power ramp and stable cooling are generally advisable. The exact operating procedure should follow the target size, bonding condition, cathode design, and supplier recommendations rather than a universal wattage.

What information should I provide when ordering Bismuth Oxide?

Provide formula or composition, purity, dimensions, quantity, backing and bonding requirements, cathode model or drawing, and any density, tolerance, or inspection requirements.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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