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Lanthanum Niobium Oxide Sputtering Target

ST0162 Lanthanum Niobium Oxide Sputtering Target, LaNbO3

Chemical Formula: LaNbO3
Catalog Number: ST0162
CAS Number: 12315-89-8
Purity: >99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Lanthanum Niobium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Lanthanum Niobium Oxide Sputtering Target (LaNbO₃) is a functional perovskite-type oxide material used in advanced thin-film deposition for electronic ceramics, dielectric layers, and oxide electronics research. Combining the rare-earth element lanthanum with niobium oxide chemistry, LaNbO₃ offers stable crystal structure, tunable electrical behavior, and good chemical robustness, making it suitable for both academic research and emerging electronic device development.

Detailed Description

LaNbO₃ sputtering targets are manufactured from high-purity lanthanum oxide and niobium oxide precursors with precisely controlled stoichiometry. Through advanced ceramic processing—homogeneous powder mixing, calcination, pressing, and high-temperature sintering—the targets achieve high density, uniform microstructure, and excellent phase purity.

As a complex oxide, LaNbO₃ enables controlled deposition of films with tailored dielectric and electronic properties without relying on reactive sputtering from metallic targets. This improves process stability and reproducibility while reducing sensitivity to oxygen partial pressure fluctuations. Due to its ceramic and semiconducting nature, RF sputtering is typically recommended to ensure stable plasma coupling and uniform target erosion.

LaNbO₃ thin films are of particular interest for applications requiring dielectric functionality, lattice compatibility with other perovskite oxides, and stable performance under thermal and electrical stress.

Applications

Lanthanum Niobium Oxide sputtering targets are commonly used in:

  • Dielectric thin films: Capacitors and insulating layers

  • Oxide electronics: Functional and buffer layers in complex oxide devices

  • Ferroelectric & perovskite heterostructures: Lattice-matched oxide stacks

  • Energy materials research: Functional oxide layers in advanced energy systems

  • Sensors: Oxide-based sensing and functional coatings

  • Academic & industrial R&D: Exploration of rare-earth niobate thin films

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionLaNbO₃Defines dielectric & structural properties
Crystal StructurePerovskite-type oxideEnables oxide heterostructures
Purity99.9% – 99.99%Minimizes defects and contamination
StoichiometryLa:Nb:O precisely controlledEnsures film consistency
Diameter25 – 200 mm (custom)Fits standard sputtering cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Density≥ 95% of theoreticalSupports stable sputtering
Sputtering ModeRF sputteringSuitable for ceramic oxides
BondingIndium / Elastomer / DirectImproves thermal & mechanical stability

Comparison with Related Oxide Targets

MaterialKey AdvantageTypical Application
LaNbO₃Stable perovskite dielectricOxide electronics & dielectrics
LaAlO₃Excellent lattice matchOxide heterostructures
Nb₂O₅High dielectric constantCapacitors & coatings
SrTiO₃Widely studied perovskiteSubstrates & electronics

FAQ

QuestionAnswer
Can LaNbO₃ sputtering targets be customized?Yes, size, purity, density, and bonding options are available.
Which sputtering method is recommended?RF sputtering is generally preferred for LaNbO₃.
Is LaNbO₃ suitable for perovskite heterostructures?Yes, it is compatible with many perovskite oxide systems.
How are the targets packaged?Vacuum-sealed with reinforced protective packaging.

Packaging

Our Lanthanum Niobium Oxide Sputtering Targets (LaNbO₃) are meticulously tagged and labeled to ensure accurate identification and strict quality control. Each target is vacuum-sealed and protected with reinforced cushioning to prevent contamination, moisture exposure, or mechanical damage during storage and transportation.

Conclusion

Lanthanum Niobium Oxide Sputtering Target (LaNbO₃) provides a reliable solution for depositing high-quality perovskite oxide thin films with controlled dielectric and electronic properties. With precise compositional control, stable sputtering performance, and flexible customization options, LaNbO₃ targets are well suited for advanced research and emerging oxide-electronics applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Order Now

LaNbO₃ Target 99.9% ø76.2×3mm Indium Bonded Cu B/Plate 3mm, LaNbO₃ target 3N ø76.2×3 mm In bonded Cu BP 3 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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