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ST0262 Iron Silicide Sputtering Target, FeSi2

Chemical Formula: FeSi2
Catalog Number: ST0262
CAS Number: 12022-99-0
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Iron Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Iron Silicide Sputtering Target Description

Iron silicide sputtering target is a type of silicide ceramic sputtering target composed of iron and silicon.

iron

Iron, also called ferrum, is a chemical element derived from the Anglo-Saxon name iren (ferrum in Latin). It has been used since before 5000 BC. The canonical chemical symbol for iron is “Fe,” and its atomic number is 26. Iron is located in Period 4 and Group 8 of the periodic table, belonging to the d-block. Its relative atomic mass is 55.845(2) Dalton, with the number in the brackets indicating the uncertainty.

Related Product: Iron Sputtering Target

Silicon

Silicon is a chemical element named after the Latin silex or silicis, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation and announcement were also accomplished by J. Berzelius. The canonical chemical symbol for silicon is “Si,” and its atomic number is 14. Silicon is located in Period 3 and Group 14 of the periodic table, belonging to the p-block. Its relative atomic mass is 28.0855(3) Dalton, with the number in brackets indicating the uncertainty.

Iron Silicide Sputtering Target Application

Iron Silicide Sputtering Target is a type of silicide ceramic sputtering target composed of iron and silicon. It is utilized in various applications, including thin film deposition, decoration, semiconductor manufacturing, display technologies, LED and photovoltaic devices, and functional coatings. Additionally, it is employed in optical information storage, glass coating industries such as automotive and architectural glass, and optical communication systems.

Iron Silicide Sputtering Target Packing

Our iron silicide sputter targets are meticulously tagged and labeled externally to facilitate efficient identification and ensure rigorous quality control. We take great care to prevent any damage during storage and transportation, ensuring that the targets reach you in optimal condition.

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TFM offers Iron Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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