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ST0882 Gallium Oxide Sputtering Targets, Ga2O3

Gallium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Gallium Oxide Sputtering Targets Description

The Gallium Oxide Sputtering Target is a high-purity, solid material used in the sputtering process for depositing thin films. Gallium oxide (Ga2O3) exists in five different polymorphic forms: monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), and orthorhombic (ε). Of these, the β-polymorph is the stable form under standard conditions and is the most extensively studied and used in various applications.

Gallium is a chemical element named after France, derived from the Latin word *Gallia*. It was first identified in 1875 by the French chemist Paul-Émile Lecoq de Boisbaudran, who also successfully isolated it. Gallium is represented by the symbol “Ga” in the periodic table, with an atomic number of 31, located in Period 4 and Group 13, within the p-block. Its relative atomic mass is 69.723(1) Dalton, with the number in parentheses indicating the uncertainty in measurement.

Related Product: Gallium Sputtering Target

Gallium Oxide Sputtering Targets Specifications

Compound FormulaGa2O3
Molecular Weight187.44
AppearanceWhite Target
Melting Point1900℃
Density5.88 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium Oxide Sputtering Targets Handling Notes

Indium bonding is advisable for Gallium Oxide Sputtering Targets due to certain properties that make the material challenging to sputter, such as its brittleness and low thermal conductivity. These characteristics make the material prone to thermal shock, so indium bonding helps enhance the target’s performance and durability during the sputtering process.

Gallium Oxide Sputtering Targets Application

The Gallium Oxide Sputtering Target is utilized in the deposition of gallium oxide thin films for a range of applications, including optoelectronics, power electronics, solar cells, sensors, and catalysis. Its high purity ensures that the resulting thin films exhibit the desired properties and meet stringent quality standards.

Gallium Oxide Sputtering Targets Packaging

We take great care in handling our Gallium Oxide Sputtering Targets during storage and transportation to ensure they remain in pristine condition, preserving their quality and integrity.

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TFM offers Gallium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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