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Copper (II) Telluride Sputtering Target

ST0938 Copper (II) Telluride Sputtering Target, CuTe

Chemical FormulaCuTe
Catalog No.ST0938
CAS Number12019-23-7
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Copper (II) Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Copper (II) Telluride Sputtering Target

Introduction

The Copper (II) Telluride (CuTe) Sputtering Target is a compound material designed for advanced thin film deposition. With its combination of copper’s electrical conductivity and tellurium’s semiconducting characteristics, it is an important material in optoelectronics, photovoltaics, and semiconductor research. This target enables the production of uniform films with controlled composition, making it highly valuable in both academic research and industrial applications.

Detailed Description

Copper (II) Telluride sputtering targets are produced from high-purity CuTe powders through techniques such as hot pressing, sintering, or vacuum melting. The resulting targets offer:

  • High Purity (≥99.9%): Ensures minimal contamination for precise thin films.

  • Stable Phase Composition: Maintains chemical integrity under sputtering conditions.

  • Uniform Density: Enhances deposition consistency and prolongs target life.

  • Custom Sizes: Available in diameters ranging from 25 mm to 300 mm, with thicknesses from 3 mm to 6 mm.

  • Bonding Options: Indium, copper, or elastomer backing plates for thermal management and mechanical stability.

Applications

Copper (II) Telluride sputtering targets are used in multiple cutting-edge fields:

  • Photovoltaics: For thin film solar cells, particularly in CdTe and related systems.

  • Optoelectronics: In photodetectors, sensors, and infrared devices.

  • Semiconductors: Functional layers in microelectronic and thermoelectric devices.

  • Research & Development: For studying Cu-Te compound films in energy and electronics applications.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Reduces contamination, improves film quality
Diameter25 – 300 mm (custom)Fits a wide range of sputtering systems
Thickness3 – 6 mmBalances sputtering rate and durability
Density~6.27 g/cm³Affects sputtering efficiency
BondingIndium, Copper, ElastomerImproves heat dissipation & stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Copper (II) Telluride (CuTe)Good balance of conductivity & semiconducting propertiesSolar cells, sensors
Cadmium Telluride (CdTe)High absorption coefficientThin film photovoltaics
Zinc Telluride (ZnTe)Wide bandgap semiconductorOptoelectronics, LEDs

FAQ

QuestionAnswer
Can Copper (II) Telluride targets be customized?Yes, dimensions, bonding, and purity levels can be tailored.
How are CuTe targets packaged?They are vacuum-sealed, cushioned with protective foam, and packed in export-safe cartons or crates.
What industries use CuTe targets?Photovoltaics, semiconductors, optoelectronics, and academic R&D.
Is backing available for large targets?Yes, indium, copper, or elastomer backing is available for stability.

Packaging

Every Copper (II) Telluride sputtering target is carefully vacuum-sealed and cushioned to prevent oxidation or mechanical damage. Clear labeling ensures full traceability, and all shipments are packed in protective cartons or wooden crates for safe global transport.

Conclusion

The Copper (II) Telluride Sputtering Target is a highly reliable compound material for producing advanced thin films in photovoltaics, optoelectronics, and semiconductor applications. With customizable purity, dimensions, and bonding options, it is a trusted choice for both research institutions and industrial manufacturing.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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