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Manganese Bismuth Sputtering Target

Chemical FormulaMn-Bi
Catalog No.ST0979
CAS Number
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made
AppearanceSilver Grey Metallic Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Introduction

Manganese Bismuth (MnBi) Sputtering Targets are alloy deposition materials used in magnetic, spintronic, and functional thin film research where controlled magnetic anisotropy and temperature-dependent behavior are required. MnBi is especially attractive for rare-earth-free magnetic materials research, offering unique ferromagnetic properties and strong perpendicular magnetic anisotropy in thin film form.

Detailed Description

MnBi sputtering targets are produced by precisely alloying high-purity manganese and bismuth under controlled conditions to achieve uniform composition and stable phase distribution. Because Mn and Bi differ significantly in melting point and vapor pressure, careful control of alloying, casting, and consolidation is essential to minimize segregation and ensure compositional consistency across the target.

Targets are available as unbonded discs for low-to-moderate power operation, or bonded to copper backing plates to improve heat dissipation and mechanical stability during higher-power magnetron sputtering. Tight control of thickness, flatness, and surface finish helps reduce arcing, particle generation, and compositional drift during deposition.

MnBi targets are commonly used with DC magnetron sputtering for conductive compositions, and can also be adapted for RF sputtering depending on system design and process requirements.

Applications

  • Rare-earth-free magnetic thin films

  • Spintronic and magneto-optical research

  • Permanent magnet material studies

  • Functional alloy and intermetallic coatings

  • Advanced materials science and R&D

Technical Parameters

ParameterTypical Value / RangeImportance
MaterialManganese Bismuth (MnBi)Magnetic intermetallic alloy
CompositionStoichiometric or custom Mn/Bi ratioTunes magnetic properties
Purity99.9% – 99.99% (total)Impacts film performance
FormDisc / Plate (bonded or unbonded)System compatibility
Diameter25 – 300 mm (custom)Fits standard magnetron cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Backing PlateCopper (optional)Improves thermal management

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Manganese Bismuth (MnBi)Rare-earth-free magnetismSpintronics & magnetic films
Cobalt (Co)Strong ferromagnetismMagnetic multilayers
Iron Platinum (FePt)High anisotropyData storage research

FAQ

QuestionAnswer
Can the Mn/Bi ratio be customized?Yes, compositions can be tailored to specific magnetic requirements.
Are bonded targets recommended?Yes, copper-backed targets are preferred for higher power sputtering.
Is DC sputtering suitable for MnBi?Yes, DC magnetron sputtering is commonly used.
How is alloy uniformity ensured?Through controlled alloying, casting, and precision machining.
Is a Certificate of Analysis provided?Yes, CoA is available upon request.

Packaging

Our Manganese Bismuth Sputtering Targets are cleaned for vacuum service, individually labeled, and vacuum-sealed to prevent oxidation and contamination. Shock-absorbing materials and export-grade cartons or wooden crates are used to ensure safe transportation and storage.

Conclusion

Manganese Bismuth Sputtering Targets deliver reliable alloy uniformity, stable sputtering performance, and flexible composition control for advanced magnetic thin film deposition. With customizable specifications and consistent quality control, they are well suited for cutting-edge magnetic materials research and functional coating applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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Manganese Bismuth (Mn:Bi = 50:50 wt%), Diameter 50.8*Height 2.5mm (+/-0.1mm), Manganese Bismuth (Mn:Bi = 50:50 wt%), Diameter 50.8*Height 5mm (+/-0.1mm)

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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