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Manganese Bismuth Sputtering Target

Chemical FormulaMn-Bi
Catalog No.ST0979
CAS Number
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made
AppearanceSilver Grey Metallic Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Manganese Bismuth Sputtering Target Description

Manganese Bismuth Sputtering Target is distinguished by its superior purity and exceptional magnetic properties, making it highly reliable for thin film deposition applications. The combination of manganese and bismuth enhances the magnetic anisotropy and thermal stability of the target, making it an excellent choice for advanced electronics, spintronics, and magnetic material development. Its ability to maintain consistent performance in high-vacuum and high-temperature environments underscores its importance in critical applications where magnetic responsiveness and structural integrity are essential.

Related Product: Manganese Sputtering Target, Bismuth Sputtering Target


Manganese Bismuth Sputtering Target Specifications

 

Chemical FormulaMn-Bi
Catalog No.ST0979
CAS Number
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made
AppearanceSilver Grey Metallic Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Manganese Bismuth Sputtering Target Handling Notes

Due to the inherent brittleness and relatively low thermal conductivity of the Manganese Bismuth alloy, indium bonding is recommended for ensuring optimal thermal management and mechanical stability during sputtering. This approach helps to minimize thermal stress, enhance deposition uniformity, and extend the target’s longevity during PVD processes. Proper handling and storage are essential to protect the target from damage and ensure long-term performance.


Manganese Bismuth Sputtering Target Application

Manganese Bismuth Sputtering Target plays a crucial role in the creation of magnetic thin films for use in spintronic devices, magnetic sensors, and data storage systems. Its excellent magnetic and thermal properties make it perfect for:

  • Magnetic storage devices

  • Magneto-optical films

  • Spintronic and quantum computing applications

  • Magnetic sensors and MEMS elements

  • Research in rare earth-alloy magnetic thin films

The synergy between manganese and bismuth supports applications in optical coatings and semiconductor devices, where precise magnetic control and structural stability are paramount.


Manganese Bismuth Sputtering Target Packaging

At TFM, all Manganese Bismuth Sputtering Target products are carefully packaged in vacuum-sealed, anti-static bags and cushioned with foam or shock-absorbent materials. The products are then placed in protective containers to ensure safe transport, maintaining quality and security from our facility to your sputtering system.


Get Contact

TFM offers Manganese Bismuth Sputtering Target in a variety of purities, sizes, and configurations, with custom fabrication options available to suit your specific deposition needs. Our advanced processing ensures high-density targets with uniform grain structure, making them ideal for use in semiconductors, magnetic materials, optical applications, and research.

Feel free to contact us for quotes, lead times, or technical consultations.

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Manganese Bismuth (Mn:Bi = 50:50 wt%), Diameter 50.8*Height 2.5mm (+/-0.1mm), Manganese Bismuth (Mn:Bi = 50:50 wt%), Diameter 50.8*Height 5mm (+/-0.1mm)

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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