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Scandium Nitride Sputtering Target , ScN

Scandium Nitride (ScN) Sputtering Target
Scandium Nitride (ScN) is a high-performance ceramic compound with excellent thermal stability, mechanical strength, and chemical resistance. It has a cubic rock-salt crystal structure and a relatively high melting point, making it suitable for demanding thin-film deposition applications.

ScN sputtering targets are widely used in semiconductor, optoelectronic, and protective coating industries. In microelectronics, ScN thin films serve as a buffer or seed layer for epitaxial growth, improving adhesion and crystalline quality. In optical applications, ScN offers good infrared reflectivity and a tunable bandgap, making it useful for infrared mirrors, decorative coatings, and photovoltaic devices.

Key Advantages

  • High hardness and wear resistance

  • Excellent thermal conductivity and stability

  • Good electrical conductivity with tunable resistivity

  • Strong adhesion to various substrates

Typical Applications

  • Hard and protective coatings

  • Infrared reflective layers

  • Semiconductor buffer layers

  • Decorative and functional optical coatings

  • Photovoltaic absorber layers

Example Specification

  • Material: Scandium Nitride (ScN)

  • Purity: 99.9% (3N)

  • Size: ø50.8 × 6.35 mm

  • Bonding: Copper backing plate, ø50.8 × 2.54 mm, total thickness < 8.89 mm

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ScN Target ø50.8*6.35mm Bonded to Cu B/Plate (ø50.8*2.54mm) Total <8.89mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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