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Cobalt Iron Manganese Germanium Sputtering Target, CoFeMnGe

Cobalt Iron Manganese Germanium Sputtering Target

Introduction

The Cobalt Iron Manganese Germanium Sputtering Target (Co-Fe-Mn-Ge) is a multi-element alloy material engineered for advanced thin film deposition. Belonging to the family of Heusler-type alloys, this compound is particularly valued in spintronics, magneto-electronic devices, and emerging semiconductor applications due to its tunable electronic structure and half-metallic behavior. Its precise composition allows researchers to manipulate magnetic ordering and electronic band gaps, opening pathways to next-generation functional films.

Detailed Description

Cobalt Iron Manganese Germanium alloys are often designed in stoichiometric ratios such as CoFeMnGe, forming a quaternary Heusler alloy with potential half-metallic ferromagnetism. As a sputtering target, the material is manufactured with:

  • High Purity (99.9% – 99.99%): Minimizes contamination, crucial for high-quality thin films.

  • High Density & Uniform Microstructure: Ensures consistent sputtering rates and film composition.

  • Custom Sizes: Available as discs, plates, rectangular targets, and step targets.

  • Optional Bonding: Copper or titanium backing plates for enhanced heat dissipation during magnetron sputtering.

Its combination of transition metals (Co, Fe, Mn) with germanium enables unique magnetic and electronic properties compared to binary or ternary alloys, making it a versatile material for R&D and industrial coating technologies.

Applications

  • Spintronics: Magnetic tunnel junctions (MTJs), spin valves, and spin-transfer torque devices.

  • Semiconductors: Integration with CMOS platforms for magneto-electronic components.

  • Magneto-optical Devices: Thin films for sensors and optical modulators.

  • R&D: Fundamental studies on quaternary Heusler alloys, half-metallicity, and thermoelectric behavior.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Ensures low contamination in thin films
CompositionCoFeMnGe (customizable)Enables tunable electronic and magnetic properties
Diameter25 – 300 mm (custom)Fits various sputtering systems
Thickness3 – 6 mmDetermines sputtering rate & uniformity
BondingCopper / Titanium backingImproves thermal management & mechanical stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Cobalt Iron Manganese Germanium (CoFeMnGe)Quaternary Heusler alloy, tunable propertiesSpintronics & semiconductor R&D
Cobalt Manganese Gallium (CoMnGa)Half-metallic ferromagnetismMTJs, magnetic coatings
Nickel Manganese Gallium (NiMnGa)Shape memory & magnetostrictionActuators, sensors
Cobalt Iron Aluminum (Co₂FeAl)Stronger ferromagnetismMagnetic recording

FAQ

QuestionAnswer
Can the target be supplied in different compositions?Yes, Co, Fe, Mn, and Ge ratios can be tailored for specific research purposes.
Is bonding necessary for all targets?Recommended for large or high-power applications to prevent cracking.
How is it packaged?Vacuum-sealed, with foam protection inside export-grade cartons or wooden crates.
Which industries use this target?Mainly in semiconductor, spintronics, optics, and R&D institutes.
What sputtering methods are supported?Compatible with RF/DC magnetron sputtering and other PVD systems.

Packaging

Each Cobalt Iron Manganese Germanium Sputtering Target is individually vacuum-sealed, clearly labeled, and packed with foam padding in secure export cartons or wooden crates. This ensures maximum protection during storage and transport.

Conclusion

The Cobalt Iron Manganese Germanium Sputtering Target is a high-performance alloy designed for advanced thin film applications where precision and reliability are paramount. Its quaternary Heusler structure makes it an exciting choice for spintronics and semiconductor R&D.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

Order Now

CoFeMnGe target 3N Co25% Fe25% Mn25% Ge25% ø25.4×3.18mm, CoFeMnGe target 3N Co25% Fe25% Mn25% Ge25% ø25.4×6.35mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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