Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors

ST0049 Tellurium Sputtering Target, Te

Chemical Formula:Te
Catalog Number:ST0049
CAS Number:13494-80-9
Purity:>99.99%, 99.999%
Shape:Discs, Plates, Column Targets, Step Targets, Custom-made

Tellurium sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Tellurium Sputtering Target Description

Tellurium

The tellurium sputtering target is composed of high-purity tellurium metal. Tellurium, symbolized as “Te,” is a chemical element named after Earth, derived from the Latin word “tellus.” It was first mentioned in 1782 and discovered by F.-J.M. von Reichenstein, with its isolation later accomplished and announced by H. Klaproth. Tellurium has an atomic number of 52 and is located in Period 5, Group 16 of the periodic table, belonging to the p-block. Its relative atomic mass is 127.60 Daltons, with the number in brackets indicating the measurement uncertainty.

Tellurium Sputtering Target Specification

Material TypeTellurium
SymbolTe
Color/AppearanceSilvery Lustrous Gray, Semi-Metallic
Melting Point449 °C
SputterRF
Density6.24 g/cm3
Thermal Conductivity1.97~3.0W/m.K
Type of BondIndium, Elastomer
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Tellurium Sputtering Target Bonding Services

Specialized bonding services for Tellurium Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Get Contact

TFM offers Tellurium Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0049 Tellurium Sputtering Target, Te”

Your email address will not be published. Required fields are marked *

Related Products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top