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ST0169 Lead Lanthanum Zirconium Titanate Sputtering Target

Chemical Formula: Pb0.83La0.17(Zr0.3Ti0.7)0.9575O3
Catalog Number: ST0169
CAS Number: 12676-60-7
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Lead Lanthanum Zirconium Titanate  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The Lead Lanthanum Zirconium Titanate (PLZT) Sputtering Target is a functional perovskite oxide material widely used for depositing ferroelectric, piezoelectric, and electro-optic thin films. By partially substituting lanthanum into the PZT lattice, PLZT exhibits enhanced dielectric properties, optical transparency, and improved fatigue resistance, making it a key material for advanced electronic, photonic, and sensor applications.

Detailed Description

PLZT is a complex oxide with a tunable composition, typically expressed as Pb₁₋ₓLaₓ(ZrᵧTi₁₋ᵧ)O₃. Precise control of the La, Zr, and Ti ratios directly affects dielectric constant, polarization behavior, optical response, and temperature stability of the deposited films.

Our Lead Lanthanum Zirconium Titanate sputtering targets are manufactured from high-purity precursor oxides through controlled powder synthesis, calcination, granulation, and high-temperature sintering. This process ensures:

  • Single-phase perovskite structure, minimizing secondary phases

  • High density and uniform grain distribution, enabling stable sputtering rates

  • Reliable stoichiometric transfer, critical for ferroelectric and electro-optic thin films

Targets are available in standard planar formats or can be bonded to copper or titanium backing plates to improve thermal management during high-power sputtering.

Applications

Lead Lanthanum Zirconium Titanate sputtering targets are widely used in:

  • Ferroelectric and piezoelectric thin-film devices

  • Electro-optic modulators and optical shutters

  • Infrared detectors and imaging components

  • Micro-electromechanical systems (MEMS)

  • Non-volatile memory and functional oxide research

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical SystemPb-La-Zr-Ti-O (PLZT)Determines ferroelectric & optical properties
Crystal StructurePerovskite oxideEnables functional thin-film behavior
Purity99.9% – 99.99%Reduces defects and electrical leakage
Diameter25 – 300 mm (custom)Fits common sputtering systems
Thickness3 – 6 mmAffects sputtering stability and lifetime
Density≥ 95% theoreticalImproves film uniformity
BondingOptional Cu / Ti backing plateEnhances heat dissipation

Comparison with Related Ferroelectric Materials

MaterialKey AdvantageTypical Application
PLZTElectro-optic response, high transparencyOptical & ferroelectric devices
PZTStrong piezoelectric propertiesActuators and sensors
BaTiO₃Lead-free dielectricCapacitors and electronics

FAQ

QuestionAnswer
Can the PLZT composition be customized?Yes, La and Zr/Ti ratios can be adjusted upon request.
Is RF or DC sputtering recommended?RF sputtering is typically used for ceramic oxide targets.
Can targets be bonded to backing plates?Yes, Cu or Ti backing plates are available for improved cooling.
Is this suitable for research applications?Yes, PLZT targets are widely used in both academic and industrial R&D.

Packaging

Our Lead Lanthanum Zirconium Titanate Sputtering Targets are carefully tagged and labeled to ensure traceability and quality control. Each target is vacuum-sealed and packed with protective materials to prevent contamination or damage during storage and transportation.

Conclusion

The Lead Lanthanum Zirconium Titanate Sputtering Target is a reliable choice for depositing high-performance ferroelectric and electro-optic thin films. With controlled composition, high density, and customization options, it supports demanding research and specialized industrial applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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