Introduction
The Lead Lanthanum Zirconium Titanate (PLZT) Sputtering Target is a functional perovskite oxide material widely used for depositing ferroelectric, piezoelectric, and electro-optic thin films. By partially substituting lanthanum into the PZT lattice, PLZT exhibits enhanced dielectric properties, optical transparency, and improved fatigue resistance, making it a key material for advanced electronic, photonic, and sensor applications.
Detailed Description
PLZT is a complex oxide with a tunable composition, typically expressed as Pb₁₋ₓLaₓ(ZrᵧTi₁₋ᵧ)O₃. Precise control of the La, Zr, and Ti ratios directly affects dielectric constant, polarization behavior, optical response, and temperature stability of the deposited films.
Our Lead Lanthanum Zirconium Titanate sputtering targets are manufactured from high-purity precursor oxides through controlled powder synthesis, calcination, granulation, and high-temperature sintering. This process ensures:
Single-phase perovskite structure, minimizing secondary phases
High density and uniform grain distribution, enabling stable sputtering rates
Reliable stoichiometric transfer, critical for ferroelectric and electro-optic thin films
Targets are available in standard planar formats or can be bonded to copper or titanium backing plates to improve thermal management during high-power sputtering.
Applications
Lead Lanthanum Zirconium Titanate sputtering targets are widely used in:
Ferroelectric and piezoelectric thin-film devices
Electro-optic modulators and optical shutters
Infrared detectors and imaging components
Micro-electromechanical systems (MEMS)
Non-volatile memory and functional oxide research
Technical Parameters
| Parameter | Typical Value / Range | Importance |
|---|---|---|
| Chemical System | Pb-La-Zr-Ti-O (PLZT) | Determines ferroelectric & optical properties |
| Crystal Structure | Perovskite oxide | Enables functional thin-film behavior |
| Purity | 99.9% – 99.99% | Reduces defects and electrical leakage |
| Diameter | 25 – 300 mm (custom) | Fits common sputtering systems |
| Thickness | 3 – 6 mm | Affects sputtering stability and lifetime |
| Density | ≥ 95% theoretical | Improves film uniformity |
| Bonding | Optional Cu / Ti backing plate | Enhances heat dissipation |
Comparison with Related Ferroelectric Materials
| Material | Key Advantage | Typical Application |
|---|---|---|
| PLZT | Electro-optic response, high transparency | Optical & ferroelectric devices |
| PZT | Strong piezoelectric properties | Actuators and sensors |
| BaTiO₃ | Lead-free dielectric | Capacitors and electronics |
FAQ
| Question | Answer |
|---|---|
| Can the PLZT composition be customized? | Yes, La and Zr/Ti ratios can be adjusted upon request. |
| Is RF or DC sputtering recommended? | RF sputtering is typically used for ceramic oxide targets. |
| Can targets be bonded to backing plates? | Yes, Cu or Ti backing plates are available for improved cooling. |
| Is this suitable for research applications? | Yes, PLZT targets are widely used in both academic and industrial R&D. |
Packaging
Our Lead Lanthanum Zirconium Titanate Sputtering Targets are carefully tagged and labeled to ensure traceability and quality control. Each target is vacuum-sealed and packed with protective materials to prevent contamination or damage during storage and transportation.
Conclusion
The Lead Lanthanum Zirconium Titanate Sputtering Target is a reliable choice for depositing high-performance ferroelectric and electro-optic thin films. With controlled composition, high density, and customization options, it supports demanding research and specialized industrial applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.




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