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ST0261 Hafnium Silicide Sputtering Target, HfSi2

Chemical Formula: HfSi2
Catalog Number: ST0261
CAS Number: 12401-56-8
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

 hafnium silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The Hafnium Silicide Sputtering Target (HfSi₂) is a refractory metal silicide target used in advanced thin-film deposition where thermal stability, low electrical resistivity, and excellent compatibility with silicon technologies are required. HfSi₂ is particularly valued in semiconductor and microelectronic applications as a contact, diffusion barrier, or functional layer in high-temperature environments.

With its combination of high melting point behavior and stable electrical performance, HfSi₂ has become an important material for both research laboratories and pilot-scale semiconductor processes.

Detailed Description

Hafnium Silicide sputtering targets are manufactured from high-purity hafnium and silicon through controlled alloying, reaction synthesis, and precision machining. The resulting target features uniform stoichiometry, dense microstructure, and consistent electrical properties, all of which are critical for reproducible sputtering performance and film quality.

Compared with pure hafnium or silicon targets, HfSi₂ offers improved thermal stability and lower contact resistance, making it suitable for high-temperature deposition and post-annealing processes. During magnetron sputtering, HfSi₂ targets demonstrate stable plasma behavior and predictable erosion profiles, enabling reliable thickness and composition control.

Targets can be supplied as monolithic silicide discs or bonded to copper or titanium backing plates to enhance heat dissipation and mechanical stability under higher sputtering power densities.

Applications

Hafnium Silicide sputtering targets are widely used in:

  • Semiconductor contacts and interconnect research

  • Diffusion barrier and adhesion layers

  • High-temperature thin-film electronics

  • Gate stack and CMOS-related materials research

  • Functional silicide thin films

  • Academic and industrial thin-film R&D

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaHfSi₂Defines silicide functionality
Purity99.9% – 99.99%Ensures electrical consistency
Target Diameter25 – 300 mm (custom)Compatible with standard sputtering guns
Thickness3 – 6 mm (custom available)Influences sputtering stability
Density≥ 99% of theoreticalPromotes uniform erosion
Backing PlateOptional (Cu / Ti)Improves thermal management
Deposition MethodDC / RF Magnetron SputteringProcess flexibility

Comparison with Related Silicide Targets

MaterialKey AdvantageTypical Application
Hafnium Silicide (HfSi₂)High thermal stability, low resistivitySemiconductor contacts
Titanium Silicide (TiSi₂)Low resistivityCMOS interconnects
Cobalt Silicide (CoSi₂)Good silicon compatibilityIntegrated circuits
Tantalum Silicide (TaSi₂)High melting pointHigh-temperature electronics

FAQ

QuestionAnswer
Is HfSi₂ suitable for high-temperature processing?Yes, it maintains stability during high-temperature deposition and annealing.
Is DC sputtering possible?Yes, DC sputtering is commonly used for conductive silicide targets.
Is bonding recommended?Bonded targets are recommended for larger sizes or higher power densities.
Can small R&D targets be supplied?Yes, laboratory-scale sizes are available.
How is the target packaged?Vacuum-sealed with protective cushioning to prevent oxidation or damage.

Packaging

Our Hafnium Silicide Sputtering Targets (HfSi₂) are meticulously vacuum-sealed and externally labeled to ensure accurate identification and strict quality control. Shock-absorbing, moisture-resistant packaging is used to protect the target during storage and international transportation.

Conclusion

The Hafnium Silicide Sputtering Target (HfSi₂) provides a reliable material solution for depositing thermally stable, low-resistivity silicide thin films used in advanced semiconductor and electronic applications. With customizable dimensions, stable sputtering behavior, and consistent material quality, HfSi₂ targets are well suited for both cutting-edge research and emerging production processes.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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