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ST0301 Zirconium Boride Sputtering Target, ZrB2

Chemical Formula: ZrB2
Catalog Number: ST0301
CAS Number: 12045-64-6
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Zirconium Boride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Zirconium Boride Sputtering Target Description

A Zirconium Boride Sputtering Target is a type of ceramic material composed of zirconium and boron, used in sputtering processes. This target is commonly utilized in thin film deposition and various specialized applications due to the unique properties of the zirconium-boron combination.

Zirconium

Zirconium is a chemical element with the symbol “Zr” and an atomic number of 40. The name “zirconium” comes from the Persian word ‘zargun,’ meaning gold-colored. It was first identified in 1789 by the chemist Martin Heinrich Klaproth, with its isolation later achieved and announced by Jöns Jakob Berzelius. Zirconium is located in Period 5 and Group 4 of the periodic table, classified within the d-block elements. Its relative atomic mass is approximately 91.224 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Zirconium Sputtering Target

BoronBoron is a chemical element with the symbol “B” and an atomic number of 5. The name boron is derived from the Arabic word ‘buraq,’ which referred to borax. It was first identified in 1808 by scientists Louis-Joseph Gay-Lussac and Louis-Jacques Thénard, with its isolation later accomplished and announced by Sir Humphry Davy. Boron is located in Period 2 and Group 13 of the periodic table, belonging to the p-block. Its relative atomic mass is approximately 10.811 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Boron Sputtering Target

Specification of Zirconium Boride Sputtering Target

Material TypeZirconium Diboride
SymbolZrB2
AppearanceGrey black targets
Melting Point3246 °C
Density6.09 g/cm3
SputterRF
Type of BondIndium, Elastomer
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Target Bonding of Zirconium Boride Sputtering Target

Specialized bonding services for Zirconium Boride Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Packaging

Our Zirconium Boride Sputtering Targets are carefully tagged and labeled on the exterior to ensure easy identification and maintain stringent quality control. We take extensive precautions to protect these targets from any potential damage during storage and transportation, ensuring they arrive in optimal condition.

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TFM offers Zirconium Boride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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