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ST0307 Gallium Selenide Sputtering Target, Ga2Se3/GaSe

Chemical Formula: Ga2Se3
Catalog Number: ST0307
CAS Number: 12024-11-2
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape:Discs, Plates, Column Targets, Step Targets, Custom-made

Gallium Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Gallium Selenide Sputtering Targets, including Ga₂Se₃ and GaSe compositions, are specialized materials used in thin film deposition processes for semiconductor, optoelectronic, and photonic applications. As layered chalcogenide compounds, gallium selenides exhibit unique electrical and optical properties that make them valuable for producing high-performance thin films through magnetron sputtering and other physical vapor deposition (PVD) techniques.

Due to their excellent nonlinear optical behavior, tunable bandgap, and strong photoresponse, Gallium Selenide materials are widely studied and applied in advanced electronic devices, optical sensors, and next-generation photovoltaic technologies. High-purity sputtering targets ensure consistent deposition, precise stoichiometry control, and reliable thin-film performance.


Detailed Description

Gallium Selenide Sputtering Targets are manufactured from carefully synthesized gallium and selenium compounds to achieve precise stoichiometric compositions such as Ga₂Se₃ (gallium(III) selenide) and GaSe (gallium monoselenide). These materials belong to the III–VI semiconductor family and are known for their layered crystal structures and strong anisotropic optical characteristics.

GaSe is a layered semiconductor material with strong nonlinear optical properties and a direct bandgap in the visible region, making it highly suitable for optical frequency conversion, photodetection, and optoelectronic devices. Ga₂Se₃, on the other hand, is a defect semiconductor with ordered vacancies in its crystal lattice, providing distinctive electrical and thermal characteristics useful for specialized semiconductor structures and thin film devices.

High-quality sputtering targets are produced through controlled powder synthesis followed by hot pressing, vacuum sintering, or hot isostatic pressing (HIP) to achieve high density and structural uniformity. Maintaining high density and low porosity is essential to ensure stable sputtering rates, minimize particle generation, and achieve uniform thin film composition during deposition.

The deposited Ga₂Se₃ or GaSe thin films demonstrate excellent photoconductive properties, nonlinear optical behavior, and semiconductor functionality. These characteristics make gallium selenide compounds particularly valuable for emerging technologies including optical switches, laser systems, and next-generation photonic components.

Targets are available in multiple sizes and configurations compatible with common sputtering systems. For higher power sputtering processes, Gallium Selenide targets may also be supplied with copper or titanium backing plates to improve thermal conductivity and enhance mechanical stability during deposition.


Applications

Gallium Selenide sputtering targets are widely used in advanced thin-film technologies, including:

  • Optoelectronic Devices – Thin films for photodetectors, photoconductors, and optical sensors.

  • Nonlinear Optical Devices – Frequency conversion crystals and optical switching components.

  • Semiconductor Research – Experimental thin films for next-generation semiconductor materials.

  • Photovoltaic Technologies – Semiconductor layers for solar cell structures and energy devices.

  • Infrared Optics – Materials for infrared detection and imaging systems.

  • Advanced Photonics – Functional thin films for optical communication and integrated photonics.


Technical Parameters

ParameterTypical Value / RangeImportance
Material CompositionGa₂Se₃ or GaSeDetermines semiconductor and optical properties
Purity99.9% – 99.999%Higher purity improves film quality and device performance
Density≥ 95% theoretical densityEnsures stable sputtering and consistent deposition
Diameter25 – 300 mm (custom)Compatible with standard sputtering cathodes
Thickness3 – 6 mmInfluences sputtering lifetime
BondingCopper / Titanium backing plateEnhances heat transfer and mechanical stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Gallium Selenide (Ga₂Se₃ / GaSe)Excellent nonlinear optical propertiesPhotonics and optoelectronics
Gallium Sulfide (GaS)Higher thermal stabilityOptical coatings and sensors
Gallium Telluride (GaTe)Strong infrared responseInfrared detectors and photonic devices

FAQ

QuestionAnswer
What is the difference between Ga₂Se₃ and GaSe sputtering targets?GaSe is a layered semiconductor with strong nonlinear optical properties, while Ga₂Se₃ is a vacancy-ordered semiconductor used in specialized electronic and photonic applications.
Can Gallium Selenide targets be customized?Yes, the diameter, thickness, purity, and bonding configuration can all be customized according to deposition system requirements.
Are these targets compatible with magnetron sputtering systems?Yes, they are commonly used in RF and magnetron sputtering systems for semiconductor and optical thin film deposition.
Do the targets require backing plates?For high-power sputtering processes, copper or titanium backing plates are recommended to improve heat dissipation and target stability.
What industries use Gallium Selenide thin films?Semiconductor research labs, optoelectronics manufacturers, photonics companies, and advanced materials research institutions.

Packaging

Our Gallium Selenide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. Each target is carefully sealed and packaged with protective foam and vacuum-safe materials to prevent contamination or mechanical damage during storage and transportation.


Conclusion

Gallium Selenide Sputtering Targets, including Ga₂Se₃ and GaSe, provide an excellent material solution for depositing advanced semiconductor and optoelectronic thin films. With high purity, controlled stoichiometry, and customizable target configurations, these materials enable reliable thin-film fabrication for research and industrial applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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Ga₂Se₃ pieces 5N 1–8mm, GaSe target 4N 2"×3 mm In Bonded 2 mm Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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