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ST0314 Titanium Selenide Sputtering Target, TiSe2

Chemical Formula: TiSe2
Catalog Number: ST0314
CAS Number: 12067-45-7
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Titanium Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Titanium Selenide sputtering targets are layered chalcogenide materials widely used in advanced thin-film research, particularly in low-dimensional physics, optoelectronics, and energy-related applications. Owing to their unique electronic structure and strong electron–phonon interactions, titanium selenide thin films are of growing interest for charge density wave (CDW) studies, thermoelectric devices, and next-generation electronic materials.

Detailed Description

Titanium Selenide, most commonly TiSe₂, is a transition-metal dichalcogenide (TMD) with a layered crystal structure. Within each layer, titanium atoms are sandwiched between selenium layers, while weak van der Waals forces hold adjacent layers together. This structure enables anisotropic electrical transport and makes TiSe₂ particularly attractive for two-dimensional material research and ultrathin film fabrication.

Our Titanium Selenide sputtering targets are produced from high-purity titanium and selenium through controlled synthesis, vacuum melting or solid-state reaction, and high-density consolidation. The resulting targets exhibit excellent compositional uniformity, high density, and good mechanical integrity, ensuring stable sputtering behavior and reproducible film stoichiometry.

These targets are compatible with RF sputtering and, depending on system configuration and target conductivity, pulsed-DC sputtering. Planar disc targets are available in standard diameters, with optional bonding to copper backing plates to enhance heat dissipation and reduce thermal stress during deposition. Custom compositions, dimensions, and bonding options can be provided to meet specific research and pilot-scale requirements.

Applications

Titanium Selenide sputtering targets are commonly used in the deposition of thin films for:

  • Charge density wave (CDW) and correlated electron studies

  • Two-dimensional (2D) material and layered semiconductor research

  • Thermoelectric thin films and energy materials

  • Optoelectronic and infrared-related devices

  • Fundamental research on transition-metal dichalcogenides

  • Academic and industrial R&D in advanced chalcogenide materials

Technical Parameters

ParameterTypical Value / RangeImportance
MaterialTitanium Selenide (TiSe₂)Defines electronic & structural behavior
Purity99.9% – 99.99%Minimizes impurity-induced defects
Crystal StructureLayered TMDEnables anisotropic properties
Diameter1″ – 4″ (custom available)Fits standard sputtering cathodes
Thickness3 – 6 mmInfluences target lifetime
Density≥ 95% of theoreticalEnsures stable sputtering rate
Backing PlateOptional CuImproves thermal management

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Titanium Selenide (TiSe₂)CDW behavior, layered structure2D materials, electronics
Titanium Disulfide (TiS₂)Higher conductivityEnergy storage, electronics
Molybdenum Diselenide (MoSe₂)Direct bandgap in thin layersOptoelectronics
Tungsten Diselenide (WSe₂)Strong spin–orbit couplingValleytronics

FAQ

QuestionAnswer
Is Titanium Selenide suitable for RF sputtering?Yes, RF sputtering is commonly used for TiSe₂ targets.
Can target size and thickness be customized?Yes, dimensions and bonding options can be tailored.
Are bonded targets available?Yes, copper-bonded targets are available upon request.
What research fields most commonly use TiSe₂ films?2D materials, CDW physics, thermoelectrics, and optoelectronics.

Packaging

Our Titanium Selenide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and strict quality control. Each target is vacuum-sealed and protected with shock-absorbing materials to prevent contamination or mechanical damage during storage and transportation.

Conclusion

Titanium Selenide sputtering targets provide reliable composition control, stable sputtering performance, and high thin-film quality for advanced chalcogenide and layered-material research. With flexible customization options and consistent manufacturing quality, these targets are an excellent choice for cutting-edge thin-film and 2D material applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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