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Germanium Antimony Telluride Sputtering Target

ST0886 Germanium Antimony Telluride Sputtering Target, GST

Germanium Antimony Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

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Germanium Antimony Telluride Sputtering Target Description

The Germanium Antimony Telluride (GeSbTe) Sputtering Target is used in thin-film deposition processes, especially in the semiconductor industry. Sputtering, a type of physical vapor deposition (PVD), involves bombarding a solid target with high-energy ions to deposit thin films onto a substrate.

GeSbTe is a compound semiconductor material known for its unique properties, making it ideal for various applications. It is widely used in phase-change random access memory (PRAM) devices due to its ability to transition between amorphous and crystalline states at different temperatures, enabling efficient data storage and retrieval. Additionally, GeSbTe-based thin films are employed in optical storage media, including rewritable CDs, DVDs, and Blu-ray discs.

Germanium Antimony Telluride Sputtering Target Specifications

Compound FormulaGe2Sb2Te5
Molecular Weight322 g/mol (GeSbTe) / 1026.8 (GeSbTe – Ge2Sb2Te5)
AppearanceSilvery-gray metallic target
Melting Point>600℃
Density6.35 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Antimony Telluride Sputtering Target Handling Notes

Indium bonding is recommended for Germanium Antimony Telluride (GeSbTe) Sputtering Targets due to the material’s inherent brittleness and low thermal conductivity, which can make it less suitable for traditional sputtering methods. Indium bonding helps mitigate these issues by improving thermal conductivity and reducing the risk of thermal shock during the sputtering process.

Germanium Antimony Telluride Sputtering Target Application

Germanium Antimony Telluride (GeSbTe) Sputtering Targets are not typically used for applications requiring pure silicon films. Instead, they are specifically employed in phase-change memory devices and other applications that benefit from GeSbTe’s unique ability to switch between amorphous and crystalline states. These targets are used in the production of optical storage media, such as CDs, DVDs, and Blu-ray discs, as well as in some electronic and semiconductor devices.

Germanium Antimony Telluride Sputtering Target Packaging

Our Germanium Antimony Telluride Sputtering Targets are meticulously handled during storage and transportation to ensure that the quality of the products is maintained in their original condition.

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TFM offers Germanium Antimony Telluride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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