Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
Copper(I) Sulfide Sputtering Targets

ST0910 Copper(I) Sulfide Sputtering Targets, Cu2S

Chemical FormulaCu2S
Catalog No.ST0910
CAS Number22205-45-4
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Copper(I) Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Copper(I) Sulfide Sputtering Targets Description

Copper(I) Sulfide Sputtering Target is a specialized material utilized in sputter deposition to create thin films of copper sulfide on various substrates. Sputter deposition is a prevalent technique in the production of electronic and optoelectronic devices, solar cells, and other applications requiring thin films with precise characteristics.

Copper sulfide materials are valuable in the manufacture of semiconductors, photovoltaic devices, and sensors. During the sputtering process, high-energy ions bombard the Copper(I) Sulfide Sputtering Target, causing atoms or molecules to be ejected. These ejected particles then deposit onto a substrate, forming a thin film of copper sulfide. The sputtering process allows for precise control over the film’s thickness and composition.

Related Products: Copper Sputtering Target, Copper (II) Selenide Sputtering Target, Copper Indium Sputtering Target

Copper(I) Sulfide Sputtering Targets Specifications

Compound FormulaCu2S
Molecular Weight159.16
AppearanceBlack solid
Melting Point (℃)1130
Boiling Point (℃)N/A
Density (g/cm3)5.6
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Copper(I) Sulfide Sputtering Targets Application

Copper(I) Sulfide Sputtering Target is utilized in the fabrication of semiconductors, photovoltaic devices, and sensors.

Copper(I) Sulfide Sputtering Targets Packaging

Our Copper(I) Sulfide Sputtering Targets are meticulously handled during storage and transportation to ensure they retain their original quality.

Get Contact

TFM offers Copper(I) Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0910 Copper(I) Sulfide Sputtering Targets, Cu2S”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top