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Manganese (II) Selenide Sputtering Target

ST0936 Manganese (II) Selenide Sputtering Target, MnSe

Chemical FormulaMnSe
Catalog No.ST0936
CAS Number1313-22-0
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Manganese (II) Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Manganese (II) Selenide (MnSe) Sputtering Target is a chalcogenide compound material known for its semiconducting and magnetic characteristics. As part of the manganese chalcogenide family, MnSe has attracted attention in spintronic research, optoelectronic materials, and magnetic semiconductor studies. When used in sputtering systems, MnSe enables the deposition of uniform thin films with controlled stoichiometry and reproducible electronic properties.

Detailed Description

Our MnSe Sputtering Targets are produced from carefully synthesized manganese and selenium sources to ensure accurate stoichiometry and phase purity. Maintaining the correct Mn:Se ratio is critical, as slight deviations can influence carrier concentration, magnetic ordering, and optical absorption in the resulting thin films.

The targets are consolidated using optimized powder processing and sintering techniques to achieve high density and structural uniformity. A dense microstructure reduces particle generation and enhances plasma stability during RF sputtering. Due to its semiconducting nature, MnSe targets are typically operated under RF sputtering conditions to ensure stable deposition and consistent film composition. Custom diameters, thicknesses, and optional bonding to metallic backing plates are available to meet specific system requirements.

Applications

Manganese (II) Selenide Sputtering Targets are widely used in advanced thin film research and specialized device fabrication, including:

  • Magnetic semiconductor thin films

  • Spintronic and magneto-optical device research

  • Chalcogenide-based optoelectronic materials

  • Infrared-sensitive thin films

  • Functional coatings for sensing applications

  • Academic and industrial R&D in transition metal chalcogenides

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionMnSeDetermines magnetic and semiconducting behavior
Purity99.9% – 99.99%Minimizes impurity-induced defects
Diameter25 – 200 mm (custom available)Compatible with sputtering systems
Thickness3 – 6 mmInfluences target lifetime
Density≥ 95% theoreticalImproves plasma stability
Sputtering ModeRF sputteringSuitable for semiconducting compounds
BondingUnbonded / Cu backing (optional)Enhances thermal management

Comparison with Related Materials

MaterialKey AdvantageTypical Application
MnSeMagnetic semiconductor propertiesSpintronic research
MnSWider band gapOptical coatings
FeSeSuperconductivity researchAdvanced physics studies
ZnSeTransparent semiconductorOptoelectronics

FAQ

QuestionAnswer
Can MnSe targets be customized?Yes, size, thickness, purity, and bonding options can be tailored.
Is RF sputtering required?Yes, MnSe is typically deposited using RF sputtering.
How is the target packaged?Vacuum-sealed with protective cushioning and export-grade cartons or crates.
Is MnSe suitable for magnetic thin films?Yes, MnSe is widely studied for magnetic semiconductor applications.

Packaging

Our Manganese (II) Selenide Sputtering Targets are meticulously labeled and vacuum-sealed to prevent moisture exposure and contamination. Protective export-grade packaging ensures safe transport and long-term storage stability.

Conclusion

Manganese (II) Selenide (MnSe) Sputtering Target provides a reliable platform for depositing high-quality magnetic and semiconducting chalcogenide thin films. With precise composition control, high density, and customizable configurations, it is well suited for advanced spintronic, optoelectronic, and research-driven applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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