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Gallium Arsenide Sputtering Target, GaAs

Chemical FormulaGaAs
Catalog No.TFM-SPT-0213
CAS Number1303-00-0
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Gallium Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Product Overview

Gallium Arsenide Sputtering Target (GaAs) is a compound sputtering target used to deposit thin films where a specific pre-compounded chemistry is required. These materials can behave differently from conductive metallic targets in terms of electrical response, thermal shock resistance, density sensitivity, and cracking risk, so target dimensions, density, backing design, and sputtering mode should be considered together.

Material and Deposition Characteristics

The appropriate sputtering mode depends on target conductivity, thermal behavior, and the power-supply configuration. Many compound ceramic targets are evaluated first with RF magnetron sputtering, especially when electrical resistivity is high. For brittle or low-thermal-conductivity materials, density, backing support, and stable cooling are important for reliable operation.

Technical Data

Compound FormulaGaAs
Molecular Weight144.64
AppearanceGrey Target
Melting Point1238 °C
Density5.3 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Typical Thin-Film Applications

  • Compound thin films for semiconductor, optical, protective, hard-coating, and functional-material research
  • Applications where a pre-compounded target is preferred over co-sputtering separate elemental targets
  • Projects requiring controlled chemistry and tailored target geometry for PVD development

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

What is the main reason to use a Gallium Arsenide sputtering target?

It provides a composition-specific source for depositing thin films when the required chemistry is better introduced from a pre-compounded target than from co-sputtering separate elements.

How should the sputtering mode for Gallium Arsenide be selected?

The power mode should be selected from target conductivity, thermal behavior, and equipment capability. Many compound ceramic targets are first evaluated with RF magnetron sputtering.

Why are density and microstructure important for Gallium Arsenide targets?

Uniform density and microstructure help support stable erosion and thermal behavior, while pores or local defects can increase the risk of cracking, particles, or unstable plasma.

Can a Gallium Arsenide target be supplied with a backing plate?

Yes. Where the material is brittle or the cathode requires a backing assembly, bonded configurations can be reviewed according to target size, thickness, cooling, and operating power.

Does target composition always equal film composition?

No. Film chemistry can shift because of different sputtering yields, reactive conditions, substrate temperature, re-sputtering, or chamber history. Verify the film when the chemistry is critical.

What should I provide to request a quotation for Gallium Arsenide?

Please provide material composition, purity, dimensions, quantity, target or backing configuration, cathode model or system details, and any drawing, tolerance, or inspection requirements.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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