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Indium Arsenide Sputtering Target

ST0947 Indium Arsenide Sputtering Target, InAs

Chemical FormulaInAs
Catalog No.ST0947
CAS Number1303-11-3
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Indium Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Indium Arsenide (InAs) Sputtering Target is a III–V compound semiconductor material well known for its narrow bandgap, high electron mobility, and strong infrared response. These properties make InAs thin films essential in infrared detectors, high-speed electronics, and optoelectronic devices. As a sputtering target, InAs enables controlled deposition of uniform semiconductor films with excellent electrical and optical performance for both research and advanced industrial applications.

Detailed Description

Our Indium Arsenide Sputtering Targets are fabricated from high-purity indium and arsenic sources using carefully controlled synthesis and consolidation processes. Strict control of stoichiometry is critical for InAs, as even small deviations in the In:As ratio can significantly influence carrier concentration, mobility, and crystalline quality of the deposited films.

The targets are produced with a dense, homogeneous microstructure to ensure stable sputtering behavior and minimal particle generation. InAs targets are typically used in RF sputtering systems due to their semiconducting nature, allowing precise control over deposition rate and film composition. Custom target sizes, thicknesses, and bonding options are available to match different sputtering tools and thermal management requirements.

Applications

Indium Arsenide Sputtering Targets are widely used in advanced semiconductor and optoelectronic thin film applications, including:

  • Infrared (IR) detectors and focal plane arrays

  • High-speed and low-noise electronic devices

  • Optoelectronic and photonic components

  • Narrow bandgap semiconductor research

  • Heterostructures and compound semiconductor devices

  • Academic and industrial R&D in III–V semiconductors

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionInAsDetermines bandgap and carrier mobility
Purity99.9% – 99.99%Reduces defect density in thin films
Diameter25 – 200 mm (custom available)Compatible with standard sputtering systems
Thickness3 – 6 mmInfluences target lifetime and sputtering rate
Density≥ 95% theoreticalImproves plasma stability
Sputtering ModeRF sputteringSuitable for semiconducting compounds
BondingUnbonded / bonded on requestEnhances thermal stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
InAsVery high electron mobility, narrow bandgapIR detectors & high-speed electronics
Indium Phosphide (InP)Better thermal stabilityOptoelectronics
Gallium Arsenide (GaAs)Mature processing technologyRF & optoelectronic devices
Indium Antimonide (InSb)Extremely narrow bandgapLong-wavelength IR detection

FAQ

QuestionAnswer
Can the InAs sputtering target be customized?Yes, diameter, thickness, purity, and bonding options can be tailored.
Is RF sputtering required for InAs?RF sputtering is commonly used due to the semiconducting nature of InAs.
How is the target packaged?Vacuum-sealed with protective cushioning and export-grade cartons or crates.
Is InAs suitable for infrared applications?Yes, InAs is widely used for IR-sensitive thin film devices.

Packaging

Our Indium Arsenide Sputtering Targets are meticulously tagged and externally labeled to ensure easy identification and strict quality control. Each target is vacuum-sealed and protected against moisture, oxidation, and mechanical damage during storage and transportation.

Conclusion

Indium Arsenide (InAs) Sputtering Target offers a reliable solution for depositing high-quality III–V semiconductor thin films with excellent electrical and infrared performance. With precise stoichiometric control, high purity, and flexible customization options, it is well suited for advanced semiconductor research and specialized device fabrication.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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