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Potassium Tantalate Sputtering Target

ST0981 Potassium Tantalate Sputtering Target, KTaO3

Chemical FormulaKTaO3
Catalog No.ST0981
CAS Number12030-91-0
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

TFM is committed to providing Potassium-Tantalate sputtering targets with a focus on exceptional quality and cost-effectiveness. Our competitive pricing ensures that these targets are an ideal choice for a diverse range of high-tech applications, delivering superior quality while maintaining affordability.

Introduction

The Potassium Tantalate Sputtering Target (KTaO₃) is a perovskite-structured oxide target widely used in advanced thin-film research involving dielectric, ferroelectric-adjacent, quantum oxide, and oxide electronics systems. KTaO₃ is particularly valued for its high dielectric constant, excellent lattice compatibility with other perovskite oxides, and unique low-temperature electronic behavior, making it a key material in next-generation oxide heterostructures and functional electronic devices.

Detailed Description

Potassium Tantalate sputtering targets are fabricated from high-purity potassium and tantalum oxide precursors using controlled solid-state synthesis, calcination, and high-density ceramic sintering. Precise stoichiometric control is essential, as potassium volatility can significantly influence film composition and dielectric performance.

The resulting KTaO₃ targets exhibit uniform phase purity, dense microstructure, and stable sputtering characteristics, enabling reproducible thin-film growth. Compared with simple binary oxides, KTaO₃ offers superior dielectric performance and crystalline compatibility with other perovskite materials such as SrTiO₃ and BaTiO₃, making it highly suitable for multilayer oxide electronics and interface engineering.

KTaO₃ sputtering targets are typically used in RF magnetron sputtering systems. Deposition conditions—including oxygen partial pressure, substrate temperature, and post-annealing—can be adjusted to tailor film crystallinity, dielectric constant, and electronic behavior.

Applications

Potassium Tantalate sputtering targets are commonly used in:

  • High-k dielectric thin films

  • Perovskite oxide heterostructures

  • Oxide electronics and interface engineering

  • Quantum materials and low-temperature transport studies

  • Capacitors and dielectric layer research

  • Functional oxide thin-film R&D

  • Academic and advanced industrial research

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaKTaO₃Defines perovskite structure
Purity99.9% – 99.99%Ensures dielectric consistency
Crystal StructurePerovskiteEnables lattice matching
Target Diameter25 – 300 mm (custom)Fits standard sputtering systems
Thickness3 – 6 mm (custom available)Influences sputtering stability
Density≥ 95% of theoreticalPromotes uniform erosion
Deposition MethodRF Magnetron SputteringSuitable for ceramic oxides

Comparison with Related Perovskite Oxide Targets

MaterialKey AdvantageTypical Application
Potassium Tantalate (KTaO₃)High dielectric constant, quantum oxide behaviorOxide electronics
Strontium Titanate (SrTiO₃)Lattice matchingSubstrates & interfaces
Barium Titanate (BaTiO₃)Ferroelectric propertiesCapacitors
Lithium Niobate (LiNbO₃)Strong electro-optic effectPhotonics

FAQ

QuestionAnswer
Is KTaO₃ ferroelectric?KTaO₃ is a quantum paraelectric with high dielectric response rather than classic ferroelectricity.
Is RF sputtering required?Yes, RF sputtering is recommended for stable deposition of ceramic KTaO₃ films.
Can potassium loss occur during deposition?Potassium volatility can be managed through optimized sputtering and annealing conditions.
Are small R&D targets available?Yes, laboratory-scale targets are supported.
How is the target packaged?Vacuum-sealed with moisture-resistant protective materials.

Packaging

Our Potassium Tantalate Sputtering Targets (KTaO₃) are meticulously vacuum-sealed and externally labeled to ensure accurate identification and strict quality control. Shock-absorbing, moisture-resistant packaging is used to preserve material integrity during storage and international transportation.

Conclusion

The Potassium Tantalate Sputtering Target (KTaO₃) is an advanced oxide material solution for depositing high-performance dielectric and perovskite thin films. With stable sputtering behavior, controlled stoichiometry, and customizable dimensions, KTaO₃ targets are well suited for cutting-edge oxide electronics, quantum materials research, and next-generation functional thin-film applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Related Product: Potassium Niobate Sputtering Target, Potassium Tantalate Crystal Substrates

 

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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