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Silicon Phosphorous Sputtering Target

ST0988 Silicon Phosphorous Sputtering Target, Si-P

Chemical FormulaSi-P
Catalog No.ST0988
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Our Silicon Phosphorus Sputtering Target comes in a variety of forms, purities, and sizes. We excel in producing high-purity physical vapor deposition (PVD) materials, ensuring optimal density and minimal average grain sizes for applications in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) for both display and optical technologies.

Silicon Phosphorous Sputtering Target

Introduction

The Silicon Phosphorous (Si–P) Sputtering Target is a semiconductor-grade alloy material designed for thin film deposition applications that require controlled n-type doping. By combining high-purity silicon with phosphorous, this target provides stable electrical characteristics and excellent film uniformity, making it indispensable in the production of semiconductor devices, photovoltaic cells, and microelectronic components.

Detailed Description

Silicon doped with phosphorous (Si:P) is a well-established n-type material in semiconductor technology. Phosphorous atoms introduce free electrons into the silicon lattice, enhancing electrical conductivity while maintaining the crystalline integrity and optical transparency of the deposited film.

The Si–P sputtering target is manufactured through precision melting, vacuum casting, and high-temperature sintering processes to ensure uniform dopant distribution and high density. This allows consistent sputtering behavior and reliable control over film resistivity and composition.

Key Features:

  • High purity (up to 99.999%) to ensure low defect density.

  • Stable dopant concentration for precise control of electrical properties.

  • Excellent uniformity and adhesion in deposited thin films.

  • Compatible with both RF and DC magnetron sputtering systems.

  • Available in a range of phosphorus concentrations (commonly 0.5–5 at.%).

Applications

Silicon Phosphorous sputtering targets are used in:

  • Semiconductors and microelectronics – n-type doped layers, transistor gates, and conductive interlayers.

  • Photovoltaics – doped silicon films for solar cell electrodes.

  • Thin film transistors (TFTs) – channel and contact layer formation.

  • Optoelectronic coatings – transparent conductive or semiconductor films.

  • R&D – semiconductor doping and advanced material studies.

Technical Parameters

ParameterTypical Value / RangeImportance
CompositionSi–P (0.5–5 at.% P)Defines electrical conductivity
Purity99.99% – 99.999%Reduces contamination for semiconductor use
Density≥ 2.33 g/cm³ (near theoretical)Ensures uniform sputtering performance
Diameter25 – 300 mm (custom)Fits standard sputtering systems
Thickness3 – 10 mmBalances sputtering rate and target life
Backing PlateCopper / MolybdenumImproves heat dissipation and bonding strength

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Silicon Phosphorous (Si–P)Controlled n-type doping & stabilitySemiconductors, photovoltaics
Silicon Boron (Si–B)p-type dopingComplementary semiconductor layers
Pure Silicon (Si)High purity, intrinsic layerBase material for electronics
Silicon Germanium (Si–Ge)Tunable bandgap and strain controlHigh-speed electronics

FAQ

QuestionAnswer
Can the phosphorus concentration be customized?Yes, from 0.5 to 5 at.% depending on electrical requirements.
Is the target suitable for both DC and RF sputtering?Yes, it performs well in both systems.
How are the targets bonded?Typically with copper or molybdenum backplates.
What purity levels are offered?4N to 5N purity levels are standard.
How are the targets packaged?Vacuum-sealed with desiccant, cushioned, and shipped in export-safe crates.

Packaging

Each Silicon Phosphorous Sputtering Target is carefully vacuum-sealed in cleanroom conditions, labeled for full traceability, and packed with anti-static and foam protection. Export packaging ensures the target remains free of oxidation and physical damage during transport.

Conclusion

The Si–P sputtering target combines the superior semiconducting properties of silicon with precise phosphorous doping to deliver stable, conductive, and uniform thin films. It is a cornerstone material for modern semiconductor and photovoltaic device fabrication, providing excellent control over electrical and structural characteristics.

For detailed specifications and quotations, please contact us at [sales@thinfilmmaterials.com].

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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