Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
tellurium-sputtering-target-removebg-preview

ST0993 Tellurium Sputtering Target, Te

Chemical FormulaTe
Catalog No.ST0993
CAS Number13494-80-9
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

TFM takes pride in its extensive knowledge and experience in offering competitively priced Tellurium Sputtering Targets with exceptional purity. With years of expertise in materials science, TFM ensures the delivery of high-quality targets that meet the rigorous standards required for nanotechnology and thin-film deposition applications.

MSDS File

Tellurium Sputtering Target Description

Tellurium Sputtering Targets are distinguished by their outstanding properties, making them ideal for various advanced applications. Their high purity ensures consistent, defect-free film deposition, which is vital for demanding uses. The high density of these targets provides robust physical strength and stability, suitable for challenging industrial environments. With low resistivity, they support efficient electron transport, and their excellent electrical conductivity ensures stable performance. Additionally, Tellurium Sputtering Targets demonstrate superior thermal stability, enduring harsh conditions and resisting thermal degradation. Their high sputtering rate allows for efficient film deposition, while good adhesion ensures strong bonding. These characteristics make Tellurium Sputtering Targets indispensable in fields such as electronics, communications, energy production, and environmental protection. They are particularly useful in the fabrication of solar cells, electronic devices, sensors, displays, and other cutting-edge technologies that demand high-quality thin films.

Related Product: Germanium Antimony Telluride Sputtering Target, Copper Zinc Telluride Sputtering Target

Tellurium Sputtering Target Specifications

Compound FormulaTe
Molecular Weight127.60
AppearanceSilver Grey Target
Melting Point449.51 °C
Density6.24 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Tellurium Sputtering Target Handling Notes

Indium bonding is highly recommended for the Tellurium Sputtering Target due to certain characteristics that make direct sputtering challenging, such as its brittleness and low thermal conductivity. Tellurium’s low thermal conductivity and susceptibility to thermal shock further emphasize the need for proper bonding to ensure optimal performance during sputtering processes.

Tellurium Sputtering Target Application

Solar Cells: Tellurium Sputtering Targets are ideal for creating high-efficiency solar cells, including crystalline silicon and thin-film solar cells. Their high purity and excellent conductivity make them a top choice for producing solar cells that deliver superior performance.

Electronic Devices: Tellurium Sputtering Targets are widely used in manufacturing various electronic components, such as thin-film resistors, capacitors, and transistors. Their high purity and exceptional electrical conductivity make them well-suited for producing reliable and efficient electronic devices.

Sensors: Tellurium Sputtering Targets are also key in fabricating various sensors, including temperature, gas, and humidity sensors. Their high sensitivity and stability make them an excellent material for producing sensors that require precise and consistent performance.

Displays: Tellurium Sputtering Targets are used in manufacturing various types of displays, such as liquid crystal displays (LCDs) and plasma displays. Their high purity and good electrical conductivity make them ideal for ensuring high-quality display production.

Tellurium Sputtering Target Packaging

Our Tellurium Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

Get Contact

TFM’s Tellurium Sputtering Target is available in a range of forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with maximum density and minimal average grain sizes, making them ideal for use in semiconductor applications, chemical vapor deposition (CVD), and PVD processes for display and optical technologies.

Order Now

Te Target 4N 150*50*3mm Indium Bonded 3mm Cu B/Plate, Te Target 4N 150*50*6mm Indium Bonded 6mm Cu B/Plate, Te Target 4N ø50.8*6.35mm (ø2” × 1/4”), Indium Bonded to Titanium B/Plate 3mm thick with keeper, Te Target 4N ø50.8*3mm (ø2” × 1/4”), Indium Bonded to Titanium B/Plate 3mm thick with keeper

Reviews

There are no reviews yet.

Be the first to review “ST0993 Tellurium Sputtering Target, Te”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top