Epitaxial Wafers & Templates
GaN, AlN, Si, SiC and compound-semiconductor layer structures — configured for your research and device design.
Thin Film Substrates / Epitaxial Wafers
Choose Your Epitaxial Layer Structure
TFM supplies epitaxial wafers and templates with crystalline layers grown on a selected substrate. Explore the material families below, from simple epilayers and growth templates to multilayer electronic and optical structures. Send your layer drawing or specification for a configuration-specific quotation.
An epi-ready bare substrate has no specified epitaxial film. If you need an uncoated growth substrate, see our semiconductor substrates and GaN growth-substrate directory.
Browse Epitaxial Wafer Families
GaN Epitaxial Wafers & Templates
GaN-on-sapphire, GaN-on-Si, GaN-on-SiC and GaN-on-GaN
GaN on Sapphire
UID or doped GaN films on sapphire; specify sapphire orientation, GaN thickness, surface finish and buffer structure.
GaN on Silicon
GaN epitaxy on Si with a suitable buffer / transition stack. Specify Si orientation, wafer bow and substrate resistivity requirements.
GaN on Silicon Carbide
GaN epitaxy on SiC; specify SiC polytype, conductivity and the complete buffer / channel structure.
GaN on GaN
Homoepitaxial GaN structures on native GaN substrates for vertical-device and materials research.
AlGaN/GaN HEMT Structures
Barrier, channel, buffer and cap layers configured for RF or power-device development; provide the full layer design.
InGaN/GaN LED & Quantum-Well Structures
Single or multiple quantum wells, n/p layers and contact layers specified for the intended optical structure.
AlN & AlGaN Epitaxial Templates
Nitride templates and high-aluminum-content structures
AlN on Sapphire
Epitaxial AlN templates on single-crystal sapphire for subsequent nitride growth and UV / photonic research.
AlN on SiC or AlN
AlN layers on SiC or native AlN substrates; specify polarity, orientation and surface requirements.
AlGaN / AlN Structures
AlGaN epilayers, graded layers and AlGaN/AlN multilayers; specify aluminum composition and layer thicknesses.
UV LED Epitaxial Structures
AlGaN-based active-region and cladding stacks for UV-device development; wavelength and electrical targets require a defined design.
Silicon, SiGe & Germanium Epitaxial Wafers
Group-IV homoepitaxy and heteroepitaxy
Si on Si
Single- or multilayer silicon epitaxy, including n/n+, p/p+ and other doping profiles on polished silicon substrates.
SiGe on Si
Strained or relaxed SiGe layers, graded buffers and Si/SiGe multilayers; specify germanium fraction and strain condition.
Ge on Si
Germanium epitaxial layers on silicon with the required buffer, thickness and surface specifications.
Ge on Ge & Si/SiGe Quantum Wells
Germanium homoepitaxy and research heterostructures configured to the requested layer sequence.
Silicon Carbide Epitaxial Wafers
SiC epilayers on SiC or silicon substrates
4H-SiC on 4H-SiC
Doped or nominally undoped SiC epitaxy; specify substrate face, offcut, drift-layer thickness and doping.
SiC Multilayer Structures
Buffer, drift and other functional layers for diode / transistor research, with acceptance criteria defined per stack.
3C-SiC on Si
Cubic SiC heteroepitaxy on silicon for research and MEMS applications; specify orientation, thickness and residual-stress requirements.
GaAs-Based Epitaxial Wafers
Electronic, laser, LED and detector layer structures
GaAs & AlGaAs on GaAs
GaAs homoepitaxy, AlGaAs epilayers and AlGaAs/GaAs multilayers with specified doping and aluminum content.
InGaP/GaAs & InGaAs/GaAs
HBT, pHEMT and related heterostructures; specify composition, strain and channel / emitter design.
GaAs VCSEL & Laser Structures
DBRs, quantum wells and contact layers designed as a complete stack for the specified wavelength.
AlGaInP LED & III-V Solar-Cell Stacks
Visible-emitter and multijunction photovoltaic structures on appropriate GaAs or Ge platforms.
InP-Based Epitaxial Wafers
Telecom, photodetector and high-speed electronic structures
InP & InGaAs on InP
InP homoepitaxy and InGaAs absorber / channel structures; specify lattice matching or intended strain.
InAlAs/InGaAs & InGaAsP/InP
Barrier, quantum-well, cladding and active-region structures with a customer-defined layer sequence.
InP Laser & Detector Epiwafers
Laser, PIN, avalanche-photodiode and SWIR-detector structures; provide wavelength and device architecture.
InP HEMT, HBT & QCL Structures
Specialized electronic and quantum-cascade layer stacks for design-based technical review.
Antimonide Epitaxial Structures
Infrared and narrow-bandgap semiconductor platforms
GaSb on GaSb
GaSb homoepitaxial films and buffers with requested conductivity, thickness and orientation.
InAs/GaSb & InAs/InAsSb Superlattices
Type-II infrared structures with specified periods, layer thicknesses and target spectral range.
InAs, InSb & AlGaSb-Based Stacks
Narrow-bandgap and barrier-layer structures on compatible substrates / buffers; compatibility is reviewed for each design.
Oxide & Specialty Research Epitaxy
Crystalline oxide films and application-specific heterostructures
β-Ga₂O₃ on β-Ga₂O₃
Gallium oxide homoepitaxy; specify phase, orientation, donor / carrier requirements and film thickness.
Ga₂O₃ on Sapphire
Heteroepitaxial gallium oxide structures; explicitly identify the requested phase and orientation.
ZnO & Doped-ZnO Films
ZnO-based epitaxial films on appropriate single-crystal substrates for electronic and optoelectronic research.
Complex-Oxide Heterostructures
SrTiO₃-, BaTiO₃-, PZT-, LSMO- and other oxide-based films / multilayers on lattice-appropriate substrates, reviewed against the requested crystal structure.
YIG & Magnetic-Garnet Films on GGG
Epitaxial YIG and substituted iron-garnet films for microwave, magnonic and magneto-optical research; specify substrate orientation, thickness and magnetic / optical criteria.
II–VI Epitaxial Structures
Telluride and selenide semiconductor layer systems
CdTe & CdZnTe-Based Layers
CdTe and CdZnTe epilayers / buffer structures on compatible single-crystal platforms; specify composition and orientation.
HgCdTe on CdZnTe
Mercury-cadmium-telluride absorber structures for infrared research; cadmium fraction, doping, layer thickness and spectral target must be defined.
ZnSe-Based Epitaxy
ZnSe and related II–VI heterostructures on compatible substrates such as GaAs; specify buffer and lattice / strain requirements.
Specialty & Quantum Epitaxial Materials
Design-based structures for advanced materials research
Single-Crystal Diamond Homoepitaxy
Crystalline diamond epilayers on diamond seeds / substrates, with intentional doping or intrinsic layers specified for the application.
Epitaxial Graphene on SiC
Graphene formed on single-crystal SiC; specify Si-face or C-face, substrate polytype, layer count and coverage criteria.
Quantum-Well, Superlattice & Quantum-Dot Structures
Si/SiGe, III–V and other compatible heterostructures with customer-defined layer / period designs, compositions and target measurements.
Example: UID GaN on Sapphire
A configurable template example: 4-inch sapphire, an AlN buffer layer, and a 4 µm UID GaN epitaxial layer, with single-side-polished finish. This example does not define the buffer thickness or the specification of other GaN structures.
UID GaN epitaxial layer · 4 µm
AlN buffer · thickness to be specified
Single-crystal sapphire substrate
Layer sequence shown from top surface to substrate. Schematic only; not to scale.
Specify Your Epitaxial Wafer
- Layer sequence: material, alloy composition, thickness and tolerance of every layer, including buffer, cap, barrier and active region.
- Substrate: material / polytype, wafer diameter or chip dimensions, thickness, orientation, offcut, conductivity and resistivity.
- Doping: UID, n-type or p-type; dopant species, concentration / carrier density and required profile.
- Surface and geometry: polarity or face, polish, roughness, bow / warp, TTV, edge exclusion and backside finish.
- Acceptance data: requested XRD, AFM, Hall, PL, thickness / doping maps or defect measurements, with test methods and limits.
- Order details: quantity, intended application, required date and delivery country.
Available sizes, growth method, measurement package, price and lead time are confirmed for the specific structure. A template wafer and a finished device epi-stack are quoted as different products.
Epitaxial Wafer FAQ
No. GaN-on-Si has a GaN-containing layer stack on a silicon substrate. A silicon epitaxial wafer normally has a crystalline silicon epilayer on silicon.
No. The top epitaxial semiconductor is GaN in GaN-on-SiC, and SiC in a SiC epitaxial wafer. Substrate conductivity, buffer design and intended device application also differ.
No. An AlN epitaxial template has an oriented crystalline AlN film on a specified single-crystal substrate. A polycrystalline AlN ceramic sheet is a different material form.
UID means unintentionally doped. It does not guarantee zero impurities, zero carrier concentration or semi-insulating behavior. Specify the required electrical properties separately.
Yes. Send a layer-by-layer drawing with compositions, thicknesses, doping and acceptance criteria. We will review the substrate compatibility and confirm the proposed configuration in the quotation.
No. SOI describes a silicon / buried-insulator structure, while thermal-oxide silicon has an oxide coating. The manufacturing route and actual crystalline layer structure must be specified.
Request a Custom Epitaxial Wafer Quote
Send your substrate and layer-stack specification, quantity and delivery requirements. If the design is still being developed, tell us the material system and intended application so we can identify the details needed for quotation.
Or email sales@thinfilmmaterials.com. Attach a layer drawing or specification sheet where available.