Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors

Gallium Nitride Wafer (GaN)

MSDS File

TFM’s Gallium Nitride Wafers: Precision and Performance Redefined

TFM takes pride in manufacturing premium-quality Gallium Nitride (GaN) wafers, built with advanced technological expertise and meticulous craftsmanship. As a recognized leader in the semiconductor materials industry, TFM is dedicated to providing reliable, high-precision solutions tailored to meet the evolving needs of our customers.

Our GaN wafers stand out for their unmatched consistency and superior manufacturing processes, setting a benchmark in the industry. With a commitment to continuous innovation, TFM remains at the cutting edge of wafer production, contributing to technological advancements with dependable, high-performance materials.

Gallium Nitride Wafer Specifications

SpecificationDetails
Size10.0 mm x 10.5 mm, 14.0 x 15.0 mm, 2″ Dia, 4″ Dia
Thickness400 μm ± 30 μm / 450 μm ± 30 μm
PolishedFront Surface: Ra < 0.2 nm, Epi-ready polished
Back Surface: Fine ground
OrientationC-axis (0001) ± 0.5°
TTV< 15 μm
Bow< 20 μm

Gallium Nitride Wafer Physical Properties

PropertyDetails
MaterialGaN
Conduction TypeN-Type
Resistivity (300K)< 0.02 Ω·cm / < 0.2 Ω·cm / > 1E8 Ω·cm
EPD (Average)Less than 5 x 10⁶ cm⁻²
Usable Surface Area> 90%
GradeProduction, Research, Dummy

Explore the exceptional performance and precision offered by TFM’s Gallium Nitride wafers, designed to empower next-generation semiconductor technologies.

Reviews

There are no reviews yet.

Be the first to review “Gallium Nitride Wafer (GaN)”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

A thin film substrate is the base material upon which thin layers of materials are deposited to create electronic, optical, or mechanical devices. The substrate provides structural support and can influence the properties of the thin film.

The choice of substrate affects the film’s structural integrity, electrical properties, and overall performance. Factors like thermal expansion coefficient, surface smoothness, and chemical compatibility are crucial considerations.

Materials such as lanthanum aluminate (LaAlO₃), magnesium oxide (MgO), and strontium titanate (SrTiO₃) are commonly used due to their lattice compatibility and thermal stability, which are essential for optimal superconducting properties.

Metal substrates offer high electrical and thermal conductivity, making them suitable for applications requiring efficient heat dissipation and electrical connectivity. However, their surface properties and potential for oxidation must be managed during deposition.

These substrates are materials that can support the growth of thin films exhibiting magnetic or ferroelectric properties, essential for applications in memory devices, sensors, and actuators.

Semiconductor substrates, such as silicon wafers, serve as the foundation for integrated circuits and various electronic components, providing the necessary electrical characteristics and structural support for device fabrication.

Gallium Nitride (GaN) substrates are pivotal for high-performance optoelectronic and power devices due to their excellent thermal conductivity, high breakdown voltage, and efficiency. They are widely used in LEDs, power transistors, and RF components.

Halide crystal substrates, composed of halide compounds, are utilized in specialized optical applications, including infrared spectroscopy and laser systems, due to their unique optical properties.
Ceramic substrates provide high thermal stability, mechanical strength, and electrical insulation, making them ideal for high-frequency and high-power applications.
Proper surface preparation, including cleaning and polishing, ensures the removal of contaminants and surface irregularities, leading to improved film adhesion, uniformity, and performance.
Yes, thin films can be deposited on flexible substrates like polymers, enabling the development of flexible electronics and wearable devices. However, challenges include managing mechanical stress and ensuring film adhesion.
Challenges include ensuring lattice matching to minimize defects, managing thermal expansion differences to prevent stress and delamination, and achieving desired electrical and optical properties for specific applications.
Shopping Cart
Scroll to Top