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Arsenic Telluride Sputtering Target

ST0953 Arsenic Telluride Sputtering Target, As2Te3

Chemical FormulaAs2Te3
Catalog No.ST0953
CAS Number12044-54-1
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Arsenic Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Arsenic Telluride (As₂Te₃) Sputtering Target is a chalcogenide compound material widely used in infrared optics, phase-change technologies, and advanced semiconductor research. Known for its narrow band gap, high refractive index, and strong infrared transparency, As₂Te₃ plays a key role in optoelectronic and memory-related thin film applications. As a sputtering target, As₂Te₃ enables controlled deposition of uniform chalcogenide films with stable electrical and optical properties.

Detailed Description

Our Arsenic Telluride Sputtering Targets are fabricated from high-purity arsenic and tellurium using carefully controlled synthesis and consolidation processes to ensure accurate stoichiometry and structural homogeneity. Precise As:Te ratio control is critical, as slight deviations can significantly affect crystallization behavior, electrical resistivity, and optical transmission in the deposited films.

The targets are processed to achieve high density and a uniform microstructure, minimizing particle generation and improving plasma stability during sputtering. Due to the semiconducting nature of As₂Te₃, RF sputtering is typically recommended to ensure stable deposition and consistent film composition. Custom sizes, thicknesses, and optional bonding to metallic backing plates are available to accommodate various sputtering systems and thermal management requirements.

Applications

Arsenic Telluride Sputtering Targets are commonly used in:

  • Infrared optical coatings and waveguides

  • Phase-change memory (PCM) research

  • Chalcogenide-based optoelectronic devices

  • Infrared detectors and sensors

  • Optical data storage materials

  • Academic and industrial R&D in chalcogenide semiconductors

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionAs₂Te₃Determines phase-change and IR properties
Purity99.9% – 99.99%Reduces defect-related absorption
Diameter25 – 200 mm (custom available)Compatible with sputtering systems
Thickness3 – 6 mmInfluences target lifetime
Density≥ 95% theoreticalImproves plasma stability
Sputtering ModeRF sputteringSuitable for semiconducting compounds
BondingUnbonded / Cu backing (optional)Enhances heat dissipation

Comparison with Related Materials

MaterialKey AdvantageTypical Application
As₂Te₃High refractive index & IR transparencyIR optics & PCM
Ge–Sb–Te (GST)Established phase-change materialMemory devices
As₂Se₃Broader IR transmission rangeOptical waveguides
Te-based alloysFast crystallizationData storage

FAQ

QuestionAnswer
Can the target size be customized?Yes, diameter, thickness, and bonding options are available.
Is RF sputtering required?Yes, As₂Te₃ is typically deposited using RF sputtering.
Are bonded targets available?Yes, metallic backing plates can be supplied upon request.
How is the target packaged?Vacuum-sealed with protective cushioning and export-grade cartons or crates.

Packaging

Our Arsenic Telluride Sputtering Targets are meticulously tagged and vacuum-sealed to prevent oxidation and contamination. Protective export-grade packaging ensures safe transport and storage stability.

Conclusion

Arsenic Telluride (As₂Te₃) Sputtering Target provides a reliable solution for depositing high-performance chalcogenide thin films with excellent infrared and phase-change properties. With controlled composition, high density, and flexible customization options, it is well suited for advanced optoelectronic and memory device research.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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