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ST0430 Bismuth Lutetium Iron Gallate Sputtering Target, Bi1.5Lu1.5Fe4GaO12

Chemical Formula: Bi1.5Lu1.5Fe4GaO12
Catalog Number: ST0430
Purity: 99.9%, 99.99%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Bismuth Lutetium Iron Gallate sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Bismuth Lutetium Iron Gallate Sputtering Target Description

Bismuth lutetium iron gallate is a sputtering target with the chemical formula of Bi1.5Lu1.5Fe4GaO12. High-purity bismuth lutetium iron gallate sputtering targets play a crucial role in deposition processes to ensure high-quality deposited films. TFM specializes in producing up to 99.9995% purity sputtering targets using stringent quality assurance processes to guarantee product reliability.

Related products: Bismuth Sputtering Target, Lutetium Sputtering Target, Iron Sputtering Target

Bismuth Lutetium Iron Gallate Sputtering Target Specification

Material TypeBismuth lutetium iron gallate
SymbolBi1.5Lu1.5Fe4GaO12
Color/AppearanceSolid
Melting PointN/A
DensityN/A
Type of BondElastomer, Indium
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Bismuth Lutetium Iron Gallate Sputtering Target Packaging

Our bismuth lutetium iron gallate sputter targets are carefully handled to prevent damage during storage and transportation and to preserve the quality of our products in their original condition.

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TFM offers Bismuth Lutetium Iron Gallate Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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