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ST0431B Bismuth Manganate Sputtering Target, Bi3MnO3

Chemical Formula: Bi2.4MnO3, BiMnO3, Bi3MnO3
Catalog Number: ST0431
Purity: 99.9%, 99.99%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Bismuth Manganate sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Bismuth Manganate Sputtering Target Description

Bismuth Manganate Sputtering Target (Bi3MnO3) is characterized by its superior purity and unique electrical and magnetic properties, making it highly reliable for thin film deposition applications. The combination of bismuth and manganese oxide results in a material with enhanced electrical conductivity, stability, and thermal resistance, ideal for advanced semiconductor and optoelectronic applications. Its excellent performance in high-vacuum and high-temperature conditions underscores its importance in critical thin film applications that require precise and dependable characteristics.

Related Product: Bismuth Sputtering Target, Manganate Sputtering Target

Bismuth Manganate Sputtering Target Specifications

 

Chemical FormulaBi3MnO3
Catalog No.ST0431B
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made
AppearanceYellow-Orange Metallic Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Bismuth Manganate Sputtering Target Handling Notes

Due to the brittleness and relatively low thermal conductivity of the Bismuth Manganate alloy, indium bonding is highly recommended for optimal thermal transfer and mechanical stability during sputtering. This method helps to minimize thermal stress, enhances deposition uniformity, and prolongs the target’s lifespan during PVD processes. Proper handling and storage are essential to ensure the target maintains its quality and performance.

Bismuth Manganate Sputtering Target Application

Bismuth Manganate Sputtering Target plays a key role in the fabrication of magnetic thin films, optoelectronic devices, and semiconductor materials. Its excellent properties make it an ideal choice for:

  • Magnetic storage and data recording devices

  • Magneto-optical films

  • Quantum computing and spintronics applications

  • Optoelectronic devices and sensors

  • Research in rare earth and manganese oxide thin films

The combination of bismuth and manganese oxide also supports applications in optical coatings and semiconductor device manufacturing, where reliable electrical behavior and thermal stability are essential.

Bismuth Manganate Sputtering Target Packaging

At TFM, all Bismuth Manganate Sputtering Target products are carefully packaged in vacuum-sealed, anti-static bags, and cushioned with foam or shock-absorbent materials. The products are placed in protective containers to ensure safe transport, maintaining quality and safety during delivery to your sputtering system.

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TFM offers Bismuth Manganate Sputtering Target in a variety of purities, sizes, and configurations, with custom fabrication options available to meet your specific deposition system needs. Our advanced processing ensures high-density targets with uniform grain structure, optimized for use in semiconductors, magnetic materials, optical applications, and research.

Feel free to contact us for quotes, lead times, or technical consultations.

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BiMnO3 Sputtering Target, Indium Bonded 2mm Copper Plate, Bi2.4MnO3 Sputtering Target, Indium Bonded 2mm Copper Plate, Bi3MnO3 Sputtering Target, Indium Bonded 2mm Copper Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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