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Bismuth Telluride Selenide N-Type Sputtering Target, Bi₂Te₂.₇Se₀.₃

Bismuth Telluride Selenide N-Type Sputtering Target

Introduction

Bismuth Telluride Selenide N-Type Sputtering Target (commonly expressed as Bi₂Te₂.₇Se₀.₃) is an essential material for thermoelectric devices, semiconductor thin films, and advanced electronic components. Its finely tuned composition enables controlled carrier concentration and high Seebeck performance, making it indispensable for research laboratories and microelectronics manufacturers working on next-generation thermal-management technologies.

Detailed Description

The Bismuth Telluride Selenide N-Type Sputtering Target is engineered with a carefully optimized Bi–Te–Se ratio to balance electrical conductivity, thermal conductivity, and stability during sputtering.

  • N-type thermoelectric characteristics: Selenium substitution introduces additional free electrons, enhancing electrical transport properties required for high-performance thermoelectric thin films.

  • Dense microstructure: Manufactured by vacuum hot pressing or cold isostatic pressing followed by sintering to achieve high density and uniform grain distribution, essential for consistent sputtering rates.

  • Stable sputtering behavior: The composition minimizes volatilization of Te during deposition and improves film uniformity for semiconductor-grade thermoelectric layers.

  • High purity: Typical purities range from 99.9% to 99.999%, supporting clean, defect-free film growth for precision device applications.

These characteristics make the target particularly suitable for thermoelectric thin-film development, micro-cooling modules, and material optimization studies.

Applications

  • Thermoelectric devices (Peltier coolers, micro-coolers, energy harvesting modules)

  • Semiconductor thermal management thin films

  • Thermoelectric sensors and IR detectors

  • Research on N-type Bi–Te–Se alloy systems

  • Thin-film thermoelectric generators

  • MEMS and microelectronics requiring localized cooling

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.999%Higher purity improves electrical properties and film reproducibility
CompositionBi₂Te₂.₇Se₀.₃ (N-type)Provides optimized carrier concentration
Diameter25 – 300 mm (custom)Compatible with standard sputtering systems
Thickness3 – 6 mmInfluences sputtering stability and target lifetime
Density≥ 95% theoreticalEnsures uniform erosion and film consistency
BondingIndium / Elastomer / Copper backingEnhances thermal conductivity and prevents cracking

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Bi₂Te₂.₇Se₀.₃ (N-type)High Seebeck coefficient and optimized electron concentrationThermoelectric cooling thin films
Bi₀.₅Sb₁.₅Te₃ (P-type)High performance for complementary P-legComplete thermoelectric modules
Bi₂Te₃Lower cost & widely used baseline TE materialGeneral thermoelectric R&D

FAQ

QuestionAnswer
Can the target be customized?Yes. Purity, diameter, thickness, and bonding can be tailored to your deposition system.
What is the packaging method?Vacuum-sealed, anti-shock foam protected, shipped in export-grade cartons or wooden crates.
Is bonding necessary?Recommended for large-diameter targets to improve heat dissipation and prevent cracking.
What deposition systems are compatible?DC/RF magnetron sputtering systems used in semiconductor and thermoelectric research.
Does the element ratio affect film properties?Yes, the Bi–Te–Se ratio directly determines carrier type, concentration, and thermoelectric efficiency.

Packaging

Each Bismuth Telluride Selenide N-Type Sputtering Target is vacuum-sealed and externally labeled for traceability. Additional cushioning and rigid outer packaging ensure safe transport and prevent chipping or oxidation during storage.

Conclusion

The Bismuth Telluride Selenide N-Type Sputtering Target offers a precise balance of electrical efficiency, stability, and reproducibility for thermoelectric thin-film development. With customizable dimensions, bonding options, and high purity grades, it provides a reliable solution for advanced research and industrial sputtering applications.

For detailed specifications or a quotation, please contact us at sales@thinfilmmaterials.com

Order Now

BiTeSe TRG Bi₂Te₂.₇Se₀.₃ N Type, ø76.2x3mm, Bonded to 2mm Cu B/P, 4N

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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