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Boron Carbide Sputtering Target, B₄C

Boron Carbide Sputtering Target, B₄C
Catalog No.: TFM-SPT-0079
One listed specification: B4C disc 99.5% ø100×6mm

For a quotation, specify the required composition, purity, dimensions, quantity and cathode details. Include any backing, bonding or inspection requirements.

Product Overview

Boron Carbide Sputtering Target (B4C) is a compound sputtering target used to deposit thin films where a specific pre-compounded chemistry is required. These materials can behave differently from conductive metallic targets in terms of electrical response, thermal shock resistance, density sensitivity, and cracking risk, so target dimensions, density, backing design, and sputtering mode should be considered together.

Material and Deposition Characteristics

The appropriate sputtering mode depends on target conductivity, thermal behavior, and the power-supply configuration. Many compound ceramic targets are evaluated first with RF magnetron sputtering, especially when electrical resistivity is high. For brittle or low-thermal-conductivity materials, density, backing support, and stable cooling are important for reliable operation.

Technical Data

ParameterTypical Value / RangeImportance
Purity99% – 99.9%Higher purity ensures improved film performance
Diameter25 – 300 mm (custom sizes)Fits a variety of sputtering systems
Thickness3 – 10 mmInfluences deposition rate and uniformity
Density≥ 95% of theoreticalEnsures stable sputtering behavior
BondingIndium / Elastomer / CopperEnhances thermal conductivity and mechanical stability
MaterialKey AdvantageTypical Application
Boron Carbide (B₄C)Extreme hardness, neutron absorptionWear-resistant & nuclear coatings
Titanium Nitride (TiN)High adhesion and conductivityDecorative & cutting tool coatings
Silicon Carbide (SiC)Thermal stability, chemical resistanceElectronics, aerospace components
QuestionAnswer
Can the Boron Carbide Sputtering Target be customized?Yes, we can adjust purity, size, thickness, and backing options to your requirements.
What is the typical lead time?Generally 2–3 weeks, depending on order size and specifications.
How are the targets packaged?Vacuum-sealed with protective foam, packed in export-safe cartons or wooden crates.
Which industries use Boron Carbide targets the most?Semiconductor, defense, optics, aerospace, and energy research.

Typical Thin-Film Applications

  • Compound thin films for semiconductor, optical, protective, hard-coating, and functional-material research
  • Applications where a pre-compounded target is preferred over co-sputtering separate elemental targets
  • Projects requiring controlled chemistry and tailored target geometry for PVD development

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

What is the main reason to use a Boron Carbide sputtering target?

It provides a composition-specific source for depositing thin films when the required chemistry is better introduced from a pre-compounded target than from co-sputtering separate elements.

How should the sputtering mode for Boron Carbide be selected?

The power mode should be selected from target conductivity, thermal behavior, and equipment capability. Many compound ceramic targets are first evaluated with RF magnetron sputtering.

Why are density and microstructure important for Boron Carbide targets?

Uniform density and microstructure help support stable erosion and thermal behavior, while pores or local defects can increase the risk of cracking, particles, or unstable plasma.

Can a Boron Carbide target be supplied with a backing plate?

Yes. Where the material is brittle or the cathode requires a backing assembly, bonded configurations can be reviewed according to target size, thickness, cooling, and operating power.

Does target composition always equal film composition?

No. Film chemistry can shift because of different sputtering yields, reactive conditions, substrate temperature, re-sputtering, or chamber history. Verify the film when the chemistry is critical.

What should I provide to request a quotation for Boron Carbide?

Please provide material composition, purity, dimensions, quantity, target or backing configuration, cathode model or system details, and any drawing, tolerance, or inspection requirements.

Order Now

B4C disc 99.5% ø100×6mm, B4C 99.5%, 1.00" Dia. × 0.125" Thick ST0221-01, B4C 99.5%, 1.00" Dia. × 0.250" Thick ST0221-02, B4C 99.5%, 2.00" Dia. × 0.125" Thick ST0221-03, B4C 99.5%, 2.00" Dia. × 0.250" Thick ST0221-04, B4C 99.5%, 3.00" Dia. × 0.125" Thick ST0221-05, B4C 99.5%, 3.00" Dia. × 0.250" Thick ST0221-06, B4C 99.5%, 4.00" Dia. × 0.125" Thick ST0221-07, B4C 99.5%, 4.00" Dia. × 0.250" Thick ST0221-08, B4C 99.5%, 6.00" Dia. × 0.250" Thick ST0221-09, B4C 99.5%, 8.00" Dia. × 0.250" Thick ST0221-10, Ø76.2 mm × 3 mm thick, B4C TRG, 99.5%, Bonded to Cu B/P, Total thickness ≤ 6.35 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

Manufacturing routes depend on the material and target specification. Metal targets may be cast and machined, while some ceramic targets are consolidated by sintering. Ask for the product-specific route and inspection criteria when these affect qualification.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Bonding may be selected for brittle targets, thinner precious-metal targets, or a cathode that needs a specific backing and cooling arrangement. It is not a universal requirement. Provide target and backing dimensions, the cathode model, and operating conditions for assembly review.

 

DC is commonly used with conductive targets. RF is often used for poorly conducting or insulating targets to mitigate surface charging; other power modes may be suitable depending on the target, cathode, and process. Confirm the mode against the equipment and material.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Customer-supplied powder acceptance is not assumed. Provide material identity, lot traceability, composition and impurity analysis, quantity, and handling constraints in the RFQ. TFM must confirm feasibility and acceptance criteria before any material is sent.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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