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Boron Carbide Sputtering Target

ST0221 Boron Carbide Sputtering Target, B₄C

Boron Carbide Sputtering Target

Introduction

Boron Carbide (B₄C) Sputtering Target is a highly durable ceramic material widely used in thin film deposition processes. Known for its exceptional hardness, chemical stability, and resistance to high temperatures, B₄C targets are essential in applications where wear resistance, protective coatings, and advanced semiconductor properties are required. Their ability to form uniform and adherent films makes them an indispensable material in modern industries.

Detailed Description

Boron Carbide is one of the hardest known materials, ranking just below diamond and cubic boron nitride. As a sputtering target, B₄C offers:

  • Exceptional hardness and wear resistance – ensuring long service life in demanding deposition processes.

  • High thermal stability – suitable for high-temperature environments.

  • Low density compared to other ceramics – making it advantageous where lightweight films are needed.

  • Chemical inertness – providing resistance to corrosion, oxidation, and acidic environments.

These features make Boron Carbide films particularly valuable for coatings that need to withstand mechanical stress and corrosive conditions.

Applications

Boron Carbide Sputtering Targets are used across a wide range of industries, including:

  • Semiconductors – thin films for electronic devices.

  • Hard protective coatings – tools, dies, and wear components.

  • Optical coatings – scratch-resistant and durable thin films.

  • Nuclear industry – neutron absorption layers due to boron’s high neutron cross-section.

  • Defense and aerospace – lightweight, impact-resistant coatings.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99% – 99.9%Higher purity ensures improved film performance
Diameter25 – 300 mm (custom sizes)Fits a variety of sputtering systems
Thickness3 – 10 mmInfluences deposition rate and uniformity
Density≥ 95% of theoreticalEnsures stable sputtering behavior
BondingIndium / Elastomer / CopperEnhances thermal conductivity and mechanical stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Boron Carbide (B₄C)Extreme hardness, neutron absorptionWear-resistant & nuclear coatings
Titanium Nitride (TiN)High adhesion and conductivityDecorative & cutting tool coatings
Silicon Carbide (SiC)Thermal stability, chemical resistanceElectronics, aerospace components

FAQ

QuestionAnswer
Can the Boron Carbide Sputtering Target be customized?Yes, we can adjust purity, size, thickness, and backing options to your requirements.
What is the typical lead time?Generally 2–3 weeks, depending on order size and specifications.
How are the targets packaged?Vacuum-sealed with protective foam, packed in export-safe cartons or wooden crates.
Which industries use Boron Carbide targets the most?Semiconductor, defense, optics, aerospace, and energy research.

Packaging

Our Boron Carbide Sputtering Targets are carefully vacuum-sealed and externally labeled for clear identification. Each target is cushioned with protective materials and placed in sturdy export-grade cartons or wooden crates to ensure safe delivery and prevent damage during transportation.

Conclusion

Boron Carbide Sputtering Targets combine extreme hardness, chemical stability, and unique physical properties that make them essential for advanced thin film deposition. With customizable sizes, bonding options, and high-purity grades, they are widely adopted in semiconductor, aerospace, defense, and optical industries.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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B4C disc 99.5% ø100×6mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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