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Boron Nitride Sputtering Target

ST0209 Boron Nitride Sputtering Target, BN

Chemical Formula: BN
Catalog Number: ST0209
CAS Number: 10043-11-5
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Boron Nitride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Boron Nitride Sputtering Target Description

NitrogenBoronBoron nitride sputtering targets, containing the elements boron (B) and nitrogen (N), are provided by TFM. Boron nitride (BN) is a ceramic material known for its high heat capacity, excellent thermal conductivity, low dielectric constant, and superior dielectric strength. These properties make BN an outstanding material for various applications. Additionally, boron nitride is easy to process and has non-adhesive qualities, enhancing its versatility and usability in different industries.

Related Product: Boron Sputtering Target

Boron Nitride Sputtering Target Specification

Material TypeBoron Nitride
SymbolBN
Color/AppearanceWhite, Crystalline Solid
Melting Point~3,000 °C
Theoretical Density 2.25 g/cc
SputterRF, RF-R
Type of BondIndium, Elastomer
CommentsDecomposes when sputtered. Reactive preferred.
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Boron Nitride Sputtering Target Applications

Boron nitride sputtering targets are widely used for thin film deposition in applications such as fuel cells, decorative coatings, electrical insulation, semiconductors, displays, LEDs, and photovoltaic devices, as well as glass coating. The excellent thermal and chemical stability of boron nitride ceramics makes them suitable for high-temperature equipment components. In the field of nanotechnology, BN nanotubes, which have a similar structure to carbon nanotubes but with different properties, show great potential. Hexagonal boron nitride (h-BN) ceramics are often used to manufacture BN crucibles. Cubic boron nitride (c-BN) serves as an abrasive material and is ideal for heat spreaders. Additionally, amorphous boron nitride (a-BN) layers are utilized in various semiconductor devices.

Target Bonding of Boron Nitride Sputtering Target

Specialized bonding services for Boron Nitride Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Packaging

Our boron nitride sputter targets are meticulously tagged and labeled externally to ensure clear identification and stringent quality control. We take special precautions in handling and packaging to prevent any damage during storage or transportation, ensuring that our products arrive in optimal condition.

Get Contact

TFM offers Boron Nitride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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