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ST0007B Calcium Phosphate Tribasic Sputtering Targets

MSDS File
Material TypeCalcium Phosphate Tribasic
Symbol(Ca10 (OH)2 (PO4)6)
Color/AppearanceCrystalline
Melting Point (°C)1100
DensityN/A
Molecular Weight502.31
Sputter
Exact Mass501.675955

Low Repeat Rate Calcium Phosphate Tribasic Sputtering Targets

The monophasic Ca₁₀(PO₄)₆(OH)₂ samples are synthesized through calcination of precursor gels at 1000 °C for 5 hours. The phase transformations, composition, and microstructural characteristics of the resulting polycrystalline samples are analyzed using various thermoanalytical methods (TGA/DTA), infrared spectroscopy (IR), X-ray powder diffraction (XRD), and scanning electron microscopy (SEM). The study demonstrates that the morphology of the ceramic samples can be tailored by modifying the type of complexing agent used in the aqueous sol-gel process.

Calcium Phosphate Tribasic Sputtering Targets Information

  • Purity: 99.99%
  • Circular Targets: Diameter ≤ 14 inches, Thickness ≥ 1mm
  • Block Targets: Length ≤ 32 inches, Width ≤ 12 inches, Thickness ≥ 1mm

More Information on Calcium Phosphate Tribasic Sputtering Targets

Applications

  • Ferroelectric
  • Gate Dielectric
  • CMOS (Complementary Metal-Oxide-Semiconductor)

Features

  • High Purity: Ensures superior material quality for demanding applications.
  • Custom Sizes: Available to meet specific customer requirements.

Manufacturing Process

  • Production: Cold pressed and sintered with elastomer bonding to the backing plate.
  • Cleaning & Packaging: Thoroughly cleaned for vacuum use and protected from environmental contaminants during shipment.

Options

  • 99.99% Purity: Guaranteed minimum purity for enhanced performance.
  • Custom Sizes: Smaller sizes available for research and development (R&D) applications.
  • Sputtering Target Bonding Service: Available to ensure optimal adhesion and performance in sputtering systems.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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