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Carbon Sputtering Targets

MSDS File

Material Type Carbon
Symbol C
Atomic Weight 12.0107
Atomic Number 6
Color/Appearance Black, Non-Metallic
Thermal Conductivity 140 W/m.K
Melting Point (°C) ~3,652
Coefficient of Thermal Expansion 7.1 x 10-6/K
Theoretical Density (g/cc) 2.25
Z Ratio 3.26
Sputter PDC
Max Power Density*
(Watts/Square Inch)		 80
Type of Bond Indium, Elastomer
Comments E-beam preferred. Arc evaporation. Poor film adhesion.

Overview of Carbon Sputtering Targets

Introduction to Carbon Sputtering Targets

Carbon sputtering targets, symbolized as “C,” are widely utilized in thin-film deposition processes across various industries. Carbon, derived from the Latin word “carbo” meaning coal, is a non-metallic, tetravalent element with atomic number 6. It forms strong covalent chemical bonds and exhibits multiple allotropic forms, including graphite, diamond, and amorphous carbon. Each allotrope possesses unique physical properties that make carbon an invaluable material for advanced applications.

Key Properties of Carbon Sputtering Targets

  • Material Type: Carbon
  • Symbol: C
  • Atomic Weight: 12.0107
  • Atomic Number: 6
  • Appearance: Black, non-metallic
  • Thermal Conductivity: 140 W/m.K
  • Melting Point: ~3,652°C
  • Coefficient of Thermal Expansion: 7.1 × 10⁻⁶/K
  • Density: 2.25 g/cc
  • Z Ratio: 3.26
  • Sputtering Method: PDC
  • Max Power Density: 80 W/in²
  • Bonding Options: Indium, Elastomer

Manufacturing Process

  1. Refining: Utilizing a three-layer electrolytic process to ensure high purity.
  2. Melting and Casting: Employing an electrical resistance furnace for semi-continuous casting.
  3. Grain Refinement: Achieving engineered microstructures through thermomechanical treatment.
  4. Final Packaging: Cleaned and prepared for vacuum use, with protection against environmental contaminants during shipping.

Product Specifications

  • Purity: 99.99%–99.999%
  • Circular Dimensions: Up to 14-inch diameter, minimum 1 mm thickness.
  • Block Dimensions: Up to 32-inch length, 12-inch width, minimum 1 mm thickness.

Features and Benefits

  • High Purity: Ensures optimal performance for critical applications.
  • Refined Grain Structure: Provides superior film quality and durability.
  • Competitive Pricing: Offers cost-effective solutions for various industries.
  • Semiconductor Grade: Suitable for advanced electronic and semiconductor applications.

Applications

Carbon sputtering targets are employed in:

  • Electronics
  • Semiconductor Fabrication
  • Flat Panel Display Manufacturing

Additional Options

  • Carbide Targets: Including Boron Carbide, Hafnium Carbide, Molybdenum Carbide, and more.
  • Bonding Services: Indium and elastomer bonding to meet specific project needs.

Inquiry Form

Required Information

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  • Email ID
  • Company Name
  • Industry

Optional Information

  • Phone Number
  • Address
  • Country
  • Details About Material Requirements

Submit your inquiry to learn more about our carbon sputtering targets, or explore options tailored to your application needs.

 

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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