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ST0901 Cobalt Chromium Iron Nickel Aluminum High-Entropy Alloy (HEA) Sputtering Target, Co/Cr/Fe/Ni/Al

Catalog No.ST0901
Chemical FormulaCo/Cr/Fe/Ni/Al
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

CoCrFeNiAl High-Entropy Alloy (HEA) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

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CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Target Description

The CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Target is a specialized material designed for sputter deposition processes. This technique is widely used in the semiconductor and thin-film industries to apply thin films of material onto substrates. It plays a crucial role in manufacturing electronic devices, such as integrated circuits and photovoltaic cells, and is also used for creating protective coatings on various surfaces.

A sputtering target is a solid material from which the thin film is deposited. The CoCrFeNiAl HEA Sputtering Target is composed of a high-entropy alloy that includes cobalt (Co), chromium (Cr), iron (Fe), nickel (Ni), and aluminum (Al). High-entropy alloys are a recent innovation known for their exceptional properties, including high strength, excellent corrosion resistance, and good thermal stability.

CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Target Handling Notes

Indium bonding is recommended for CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Targets due to the alloy’s inherent brittleness and low thermal conductivity, which can complicate the sputtering process. The low thermal conductivity makes the material prone to thermal shock, so using indium bonding helps improve the target’s performance and stability by mitigating these issues.

CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Target Application

CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Targets are widely utilized in the production of electronic devices, including integrated circuits and photovoltaic cells. They are also employed to create durable protective coatings on various surfaces, thanks to their unique properties.

CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Target Packaging

Our CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Targets are meticulously handled throughout storage and transportation to maintain their quality and ensure they arrive in optimal condition.

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TFM offers CoCrFeNiAl High-Entropy Alloy (HEA) Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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