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ST0903 Cobalt Nickel Vanadium High-Entropy Alloy (HEA) Sputtering Target, Co/Ni/V

Catalog No.ST0903
Chemical FormulaCo/Ni/V
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

CoNiV High-Entropy Alloy (HEA) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Cobalt Nickel Vanadium High-Entropy Alloy (HEA) Sputtering Target (Co/Ni/V)

Introduction

Cobalt Nickel Vanadium (Co/Ni/V) High-Entropy Alloy (HEA) Sputtering Target is an advanced multi-principal element alloy designed for functional thin film research and next-generation coating technologies. By combining cobalt, nickel, and vanadium in near-equiatomic or tailored ratios, this HEA system exhibits enhanced mechanical strength, corrosion resistance, and tunable magnetic and electronic properties. As a sputtering target, Co/Ni/V HEA enables deposition of compositionally complex alloy films with uniform microstructure and improved performance compared to conventional binary or ternary alloys.

Detailed Description

Our Co/Ni/V High-Entropy Alloy Sputtering Targets are produced using vacuum melting and homogenization processes to ensure compositional uniformity and structural stability. The HEA concept leverages high configurational entropy to stabilize solid solution phases, resulting in refined grain structure and improved resistance to segregation.

Precise control of elemental ratios allows tuning of hardness, magnetic response, electrical conductivity, and corrosion resistance in the deposited thin films. The targets are manufactured to high density with homogeneous microstructure, minimizing arcing and particle generation during sputtering. Due to their metallic conductivity, Co/Ni/V HEA targets are typically compatible with DC sputtering systems, though RF sputtering can also be used depending on deposition requirements.

Targets are available in planar round, rectangular, or custom configurations and may be supplied unbonded or bonded to copper backing plates for enhanced thermal management in high-power applications.

Applications

Cobalt Nickel Vanadium HEA Sputtering Targets are widely used in:

  • High-performance protective and wear-resistant coatings

  • Magnetic and functional alloy thin films

  • Corrosion-resistant surface layers

  • Energy and catalytic material research

  • Advanced structural alloy thin films

  • Academic and industrial R&D in high-entropy materials

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionCo/Ni/V (custom ratios)Controls mechanical & magnetic properties
Purity99.9% – 99.99%Reduces impurity-related defects
Diameter25 – 300 mm (custom available)Compatible with sputtering cathodes
Thickness3 – 12 mmInfluences target lifetime
Density≥ 99% theoreticalImproves plasma stability
Sputtering ModeDC / RF sputteringSuitable for conductive alloys
BondingUnbonded / Cu backing (optional)Enhances heat dissipation

Comparison with Related Alloy Targets

MaterialKey AdvantageTypical Application
Co/Ni/V HEAEnhanced stability & tunable propertiesAdvanced functional coatings
Co/Ni AlloyMagnetic performanceMagnetic films
Ni/V AlloyStrength & corrosion resistanceProtective layers
Conventional Ternary AlloysLower entropy stabilizationStandard coatings

FAQ

QuestionAnswer
Can the elemental ratios be customized?Yes, compositions can be tailored to meet specific mechanical or magnetic requirements.
Is DC sputtering suitable?Yes, the alloy is conductive and compatible with DC sputtering systems.
Are bonded targets available?Yes, copper backing plates are available for improved thermal management.
How is the target packaged?Vacuum-sealed with protective foam and export-grade cartons or wooden crates.

Packaging

Our Cobalt Nickel Vanadium High-Entropy Alloy Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and strict quality control. Each target is vacuum-sealed and carefully packaged to prevent oxidation or mechanical damage during transport.

Conclusion

Cobalt Nickel Vanadium High-Entropy Alloy (Co/Ni/V) Sputtering Target provides a reliable solution for depositing compositionally complex alloy thin films with enhanced stability and tunable properties. With precise composition control, high density, and customizable configurations, it is well suited for advanced coating systems and high-entropy alloy research.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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