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ST0417 (Discontinued) Gallium Sputtering Target, Ga

Chemical Formula: Ga
Catalog Number: ST0417
CAS Number: 7440-55-3
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Gallium sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Discontinued

Gallium Sputtering Target Description

GalliumGallium is a chemical element with the symbol “Ga” and an atomic number of 31. The name “gallium” originates from the Latin name for France, “Gallia.” It was first mentioned in 1875 and observed by Paul-Émile Lecoq de Boisbaudran, who also successfully isolated the element. Gallium is located in Period 4 and Group 13 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 69.723 Daltons, with the number in parentheses indicating a margin of uncertainty.

Gallium Sputtering Target Specifications

Material TypeGallium
SymbolGa
Color/AppearanceSilvery
Melting Point29.78 °C
Boiling Point2403 °C
Density5.91 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Packing

The gallium sputtering target from TFM is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage that might occur during storage or transportation, ensuring the product arrives in perfect condition.

Get Contact

TFM offers Gallium Sputtering Target Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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