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Erbium Oxide Sputtering Target

ST0146 Erbium Oxide Sputtering Target, Er2O3

Chemical Formula: Er2O3
Catalog Number: ST0146
CAS Number: 12061-16-4
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Erbium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Erbium Oxide Sputtering Target Description

The Erbium Oxide Sputtering Target from TFM is an oxide sputtering material with the chemical formula Er2O3.

ErbiumErbium is a chemical element named after Ytterby, Sweden. It was first mentioned in 1842 and observed by G. Mosander. The chemical symbol for erbium is “Er,” and its atomic number is 68. Erbium is located in Period 6, Group 3 of the periodic table, within the f-block. Its relative atomic mass is 167.259(3) Dalton, with the number in brackets indicating the measurement uncertainty. Erbium is commonly used in various applications, including optical fibers, lasers, and as a dopant in certain glass and crystal materials to improve their optical properties.

Related Product: Erbium Sputtering Target

OxygenOxygen is a chemical element named from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned and observed by W. Scheele in 1771, who also later accomplished and announced its isolation. The chemical symbol for oxygen is “O,” and its atomic number is 8. Oxygen is located in Period 2, Group 16 of the periodic table, within the p-block. Its relative atomic mass is 15.9994(3) Dalton, with the number in parentheses indicating the measurement uncertainty. Oxygen is essential for respiration in most life forms and is crucial in combustion, oxidation, and various chemical reactions.

Erbium Oxide Sputtering Target Handling Notes

  1. Indium Bonding: Indium bonding is recommended for Er2O3 sputtering targets due to their brittleness and low thermal conductivity, which make them less suitable for traditional sputtering methods.
  2. Thermal Conductivity: This material has low thermal conductivity and is susceptible to thermal shock. Proper handling and bonding techniques are essential to prevent damage during the sputtering process.

Erbium Oxide Sputtering Target Application

The Erbium Oxide Sputtering Target is used in a wide range of applications, including thin film deposition, decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. It is also essential for functional coatings, the optical information storage industry, glass coatings for automotive and architectural purposes, and optical communication systems, among other fields.

Packaging

Our Erbium Oxide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain strict quality control. We take extensive precautions to prevent any damage during storage and transportation, ensuring the highest standards of product integrity upon delivery.

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TFM offers Erbium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.
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Er2O3 Sputtering Target, 99.99%, with 3mm Indium Bonding Copper Backing Plate ø101.6*3.0mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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